In-line etching process control using dynamic scatterometry

International audienceIn-line process control in microelectronics manufacturing requires real-time and non-invasive monitoring techniques. Among the different metrology techniques, scatterometry, based on the analysis of ellipsometric signatures (i.e stokes coefficients vs. wavelength) of the light scattered by a patterned structures, seems to be well adapted. Traditionally, the problem of defining the shape and computing the signature is dealt with modal methods and is called direct problem. On the opposite, the inverse problem allows to find the grating shape thanks to an experimental signature acquisition, and can not be solved as easily. Different classes of algorithms have been introduced (evolutionary, simplex, etc.) to address this problem, but the method of library searching seems to be the most attractive technique for industry. This technique has many advantages that will be presented in this article, however the main limitation in real-time context comes from the short data acquisition time for different wavelengths. Indeed, the lack of data leads to the method failure and several database patterns can match the experimental data. In this article, a technique for real time reconstruction of grating shape variation using dynamic scatterometry is presented. The different tools to realize this reconstruction, such as Modal Method by Fourier Expansion, regularization technique and specific software and hardware architectures are then introduced. Results issued from dynamic experiments will finally illustrate this paper

Reflow of supported sub-100 nm polymer films as a characterization process for NanoImprint lithography

In this paper, we address the reflow behavior of polymer thin films, focusing our effort on the accuracy of surface shape recognition. Although much work was already performed to control resist reflow during lens manufacturing for instance, our approach is significantly different since no contact line (substrate/polymer/atmosphere) needs to be considered. Here, a linear stability approach is successfully developed to describe the thin film evolution which is also compared with experiments. Polystyrene films, with thickness ranging from few tens of nanometers up to several hundred of nanometers were patterned with NanoImprint lithography technique. Atomic force microscopy measurements were used to characterize smooth or steep shapes, respectively. Mechanical measurements of earlier stages of pattern reflow were directly accessible without any assumption, contrary to the diffraction method usually employed. We show that by controlling the reflow process of any complex surface shape during the course of time, measurements of material parameters such as thin film viscosity, surface tension, or even Hamaker constant can be made possible. © 2011 Elsevier B.V. All rights reserved

Pattern transfer on 200 mm Si wafer for optical applications

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Nanoimprint lithography processes on 200 mm Si wafer for optical application : Residual thickness etching anisotropy

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Quantitative characterizations of a nanopatterned bonded wafer: force determination for nanoimprint lithography stamp removal

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Stamp design effect on 100 nm feature size for 8 inch NanoImprint lithography

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Pattern transfer on 200 mm Si wafer for optical applications

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Investigation of capillary bridges growth in NIL process

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Capillary bridges growth investigation in NIL process

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