Enhanced Screening in Chemically Functionalized Graphene

Resonant scatterers such as hydrogen adatoms can strongly enhance the low energy density of states in graphene. Here, we study the impact of these impurities on the electronic screening. We find a two-faced behavior: Kubo formula calculations reveal an increased dielectric function $\varepsilon$ upon creation of midgap states but no metallic divergence of the static $\varepsilon$ at small momentum transfer $q\to 0$. This bad metal behavior manifests also in the dynamic polarization function and can be directly measured by means of electron energy loss spectroscopy. A new length scale $l_c$ beyond which screening is suppressed emerges, which we identify with the Anderson localization length.Comment: 5 pages, 4 figure

Adhesion and electronic structure of graphene on hexagonal boron nitride substrates

We investigate the adsorption of graphene sheets on h-BN substrates by means of first-principles calculations in the framework of adiabatic connection fluctuation-dissipation theory in the random phase approximation. We obtain adhesion energies for different crystallographic stacking configurations and show that the interlayer bonding is due to long-range van der Waals forces. The interplay of elastic and adhesion energies is shown to lead to stacking disorder and moir\'e structures. Band structure calculations reveal substrate induced mass terms in graphene which change their sign with the stacking configuration. The dispersion, absolute band gaps and the real space shape of the low energy electronic states in the moir\'e structures are discussed. We find that the absolute band gaps in the moir\'e structures are at least an order of magnitude smaller than the maximum local values of the mass term. Our results are in agreement with recent STM experiments.Comment: 8 pages, 8 figures, revised and extended version, to appear in Phys. Rev.

Theory of Coulomb drag for massless Dirac fermions

Coulomb drag between two unhybridized graphene sheets separated by a dielectric spacer has recently attracted considerable theoretical interest. We first review, for the sake of completeness, the main analytical results which have been obtained by other authors. We then illustrate pedagogically the minimal theory of Coulomb drag between two spatially-separated two-dimensional systems of massless Dirac fermions which are both away from the charge-neutrality point. This relies on second-order perturbation theory in the screened interlayer interaction and on Boltzmann transport theory. In this theoretical framework and in the low-temperature limit, we demonstrate that, to leading (i.e. quadratic) order in temperature, the drag transresistivity is completely insensitive to the precise intralayer momentum-relaxation mechanism (i.e. to the functional dependence of the scattering time on energy). We also provide analytical results for the low-temperature drag transresistivity for both cases of "thick" and "thin" spacers and for arbitrary values of the dielectric constants of the media surrounding the two Dirac-fermion layers. Finally, we present numerical results for the low-temperature drag transresistivity in the case in which one of the media surrounding the Dirac-fermion layers has a frequency-dependent dielectric constant. We conclude by suggesting an experiment that can potentially allow for the observation of departures from the canonical Fermi-liquid quadratic-in-temperature behavior of the transresistivity.Comment: 20 pages, 4 figure

Probing of valley polarization in graphene via optical second-harmonic generation

Valley polarization in graphene breaks inversion symmetry and therefore leads to second-harmonic generation. We present a complete theory of this effect within a single-particle approximation. It is shown that this may be a sensitive tool to measure the valley polarization created, e.g., by polarized light and, thus, can be used for a development of ultrafast valleytronics in graphene.Comment: 5 pages, 3 figure

Modeling Klein tunneling and caustics of electron waves in graphene

We employ the tight-binding propagation method to study Klein tunneling and quantum interference in large graphene systems. With this efficient numerical scheme, we model the propagation of a wave packet through a potential barrier and determine the tunneling probability for different incidence angles. We consider both sharp and smooth potential barriers in n-p-n and n-n' junctions and find good agreement with analytical and semiclassical predictions. When we go outside the Dirac regime, we observe that sharp n-p junctions no longer show Klein tunneling because of intervalley scattering. However, this effect can be suppressed by considering a smooth potential. Klein tunneling holds for potentials changing on the scale much larger than the interatomic distance. When the energies of both the electrons and holes are above the Van Hove singularity, we observe total reflection for both sharp and smooth potential barriers. Furthermore, we consider caustic formation by a two-dimensional Gaussian potential. For sufficiently broad potentials we find a good agreement between the simulated wave density and the classical electron trajectories.Comment: 14 pages, 12 figure

Controlling the Kondo Effect in CoCu_n Clusters Atom by Atom

Clusters containing a single magnetic impurity were investigated by scanning tunneling microscopy, spectroscopy, and ab initio electronic structure calculations. The Kondo temperature of a Co atom embedded in Cu clusters on Cu(111) exhibits a non-monotonic variation with the cluster size. Calculations model the experimental observations and demonstrate the importance of the local and anisotropic electronic structure for correlation effects in small clusters.Comment: 4 pages, 4 figure

Temperature driven α\alpha to β\beta phase-transformation in Ti, Zr and Hf from first principles theory combined with lattice dynamics

Lattice dynamical methods used to predict phase transformations in crystals typically deal with harmonic phonon spectra and are therefore not applicable in important situations where one of the competing crystal structures is unstable in the harmonic approximation, such as the bcc structure involved in the hcp to bcc martensitic phase transformation in Ti, Zr and Hf. Here we present an expression for the free energy that does not suffer from such shortcomings, and we show by self consistent {\it ab initio} lattice dynamical calculations (SCAILD), that the critical temperature for the hcp to bcc phase transformation in Ti, Zr and Hf, can be effectively calculated from the free energy difference between the two phases. This opens up the possibility to study quantitatively, from first principles theory, temperature induced phase transitions.Comment: 4 pages, 3 figure