Dislocation Kinks in Copper: Widths, Barriers, Effective Masses, and Quantum Tunneling

We calculate the widths, migration barriers, effective masses, and quantum tunneling rates of kinks and jogs in extended screw dislocations in copper, using an effective medium theory interatomic potential. The energy barriers and effective masses for moving a unit jog one lattice constant are close to typical atomic energies and masses: tunneling will be rare. The energy barriers and effective masses for the motion of kinks are unexpectedly small due to the spreading of the kinks over a large number of atoms. The effective masses of the kinks are so small that quantum fluctuations will be important. We discuss implications for quantum creep, kink--based tunneling centers, and Kondo resonances

Hot Extrusion of Ceramics

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/65963/1/j.1151-2916.1992.tb07206.x.pd

The Cause of ‘Weak-Link’ Grain Boundary Behaviour in Polycrystalline Bi2Sr2CaCu2O8 and Bi2Sr2Ca2Cu3O10 Superconductors

The detrimental effects of grain boundaries have long been considered responsible for the low critical current densities (J_c) in high temperature superconductors. In this paper, we apply the quantitative approach used to identify the cause of the 'weak-link' grain boundary behaviour in YBa2Cu3O7 [1], to the Bi2Sr2CaCu2O8 and Bi2Sr2Ca2Cu3O10 materials that we have fabricated. Magnetic and transport measurements are used to characterise the grain and grain boundary properties of micro- and nanocrystalline material. Magnetisation measurements on all nanocrystalline materials show non-Bean-like behaviour and are consistent with surface pinning. Bi2Sr2CaCu2O8: Our microcrystalline material has very low grain boundary resistivity (ρ_GB), which is similar to that of the grains (ρ_G) such that ρ_GB≈ρ_G=2×〖10〗^(-5) Ωm (assuming a grain boundary thickness (d) of 1 nm) equivalent to an areal resistivity of ρ_G=2×〖10〗^(-14) Ωm^2. The transport J_c values are consistent with well-connected grains and very weak grain boundary pinning. However, unlike low temperature superconductors in which decreasing grain size increases the pinning along the grain boundary channels, any increase in pinning produced by making the grains in our Bi2Sr2CaCu2O8 materials nanocrystalline was completely offset by a decrease in the depairing current density of the grain boundaries caused by their high resistivity. We suggest a different approach to increasing J_c from that used in LTS materials, namely incorporating additional strong grain and grain boundary pinning sites in microcrystalline materials to produce high J_c values. Bi2Sr2Ca2Cu3O10: Both our micro- and nanocrystalline samples have ρ_GB/ρ_G of at least 10^3. This causes strong suppression of J_c across the grain boundaries, which explains the low transport J_c values we find experimentally. Our calculations show that low J_c in untextured polycrystalline Bi2Sr2Ca2Cu3O10 material is to be expected and the significant effort in the community in texturing samples and removing grain boundaries altogether is well-founded

Atomistic simulations of dislocation mobility in Al, Ni and Al/Mg alloys

Dislocation velocities and mobilities are studied by Molecular Dynamics simulations for edge and screw dislocations in pure aluminum and nickel, and edge dislocations in Al-2.5%Mg and Al-5.0%Mg random substitutional alloys using EAM potentials. In the pure materials, the velocities of all dislocations are close to linear with the ratio of (applied stress)/(temperature) at low velocities, consistent with phonon drag models and quantitative agreement with experiment is obtained for the mobility in Al. At higher velocities, different behavior is observed. The edge dislocation velocity remains dependent solely on (applied stress)/(temperature) up to approximately 1.0 MPa/K, and approaches a plateau velocity that is lower than the smallest "forbidden" speed predicted by continuum models. In contrast, above a velocity around half of the smallest continuum wave speed, the screw dislocation damping has a contribution dependent solely on stress with a functional form close to that predicted by a radiation damping model of Eshelby. At the highest applied stresses, there are several regimes of nearly constant (transonic or supersonic) velocity separated by velocity gaps in the vicinity of forbidden velocities; various modes of dislocation disintegration and destabilization were also encountered in this regime. In the alloy systems, there is a temperature- and concentration-dependent pinning regime where the velocity drops sharply below the pure metal velocity. Above the pinning regime but at moderate stresses, the velocity is again linear in (applied stress)/(temperature) but with a lower mobility than in the pure metal.Comment: PDF, 30 pages including figures, submitted to Modelling Simul. Mater. Sci. En