Thickness dependence of magnetic properties of (Ga,Mn)As

We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The effect already starts at the very beginning of the thinning process and is accompanied by the spin reorientation transition of the in-plane uniaxial anisotropy. We postulate that a negative gradient along the growth direction of self-compensating defects (Mn interstitial) and the presence of surface donor traps gives quantitative account on these effects within the p-d mean field Zener model with adequate mod- ifications to take a nonuniform distribution of holes and Mn cations into account. The described here effects are of practical importance for employing thin and ultrathin layers of (Ga,Mn)As or relative compounds in concept spintronics devices, like resonant tunneling devices in particular.Comment: 4 pages, 4 figures and supplementary information 2 pages, 1 figur

Quantum effects in linear and non-linear transport of T-shaped ballistic junction

We report low-temperature transport measurements of three-terminal T-shaped device patterned from GaAs/AlGaAs heterostructure. We demonstrate the mode branching and bend resistance effects predicted by numerical modeling for linear conductance data. We show also that the backscattering at the junction area depends on the wave function parity. We find evidence that in a non-linear transport regime the voltage of floating electrode always increases as a function of push-pull polarization. Such anomalous effect occurs for the symmetric device, provided the applied voltage is less than the Fermi energy in equilibrium

Properties and characterization of ALD grown dielectric oxides for MIS structures

We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the Metal-Insulator-Semiconductor structure. Our best devices survive energizing up to ~3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 \times 1013 cm-2, what promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.Comment: 8 pages, 5 figures, 14 reference

Wave function engineering in quantum dot-ring nanostructures

Modern nanotechnology allows producing, depending on application, various quantum nanostructures with the desired properties. These properties are strongly influenced by the confinement potential which can be modified, e.g., by electrical gating. In this paper we analyze a nanostructure composed of a quantum dot surrounded by a quantum ring. We show that depending on the details of the confining potential the electron wave functions can be located in different parts of the structure. Since the properties of such a nanostructure strongly depend on the distribution of the wave functions, varying the applied gate voltage one can easily control them. In particular, we illustrate the high controllability of the nanostructure by demonstrating how its coherent, optical, and conducting properties can be drastically changed by a small modification of the confining potential.Comment: 8 pages, 10 figures, 2 tables, revte

Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N

The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and electron energy loss spectroscopy; high-resolution and synchrotron x-ray diffraction; synchrotron extended x-ray absorption fine-structure; synchrotron x-ray absorption near-edge structure; infra-red optics and electron spin resonance. The results of high resolution magnetic measurements and their quantitative interpretation have allowed to verify a series of ab initio predictions on the possibility of ferromagnetism in dilute magnetic insulators and to demonstrate that the interaction changes from ferromagnetic to antiferromagnetic when the charge state of the Mn ions is reduced from 3+ to 2+.Comment: 12 pages, 14 figures; This version contains the detailed characterization of the crystal structure as well as of the Mn distribution and charge stat

Spin Polarized Transport through the Double-Dot System

Spin-dependent electron transport through two quantum dots in series attached to ferromagnetic electrodes is analyzed within the framework of the non-equilibrium Green function formalism. Regime of a weak coupling between the dots is investigated. I-V characteristics and tunnel magnetoresistance are calculated and discussed in detail

Electron Transport through Double Quantum Dots with Interdot Coulomb Repulsion

Electron transport through a system of two quantum dots connected in series is studied theoretically with the use of non-equilibrium Green function formalism based on the equation of motion method. Each dot is described by the one-level Anderson Hamiltonian and interdot Coulomb interactions in the form of the Hubbard-like term are taken into account. The electric current and occupation numbers are calculated with the use of two different approaches. The results of the methods are compared and discussed in detail. Strong asymmetry of I-V characteristics with respect to bias voltage reversal are obtained when energy levels of the dots are not aligned

Electron Transport through Double Quantum Dot System with Inter-Dot Coulomb Interaction

A theoretical approach to a problem of electron transport through double quantum dot systems based on non-equilibrium Green function formalism using equation of motion method is presented. I-V characteristics and differential conductance are calculated and discussed in detail in the intermediate regime with tunneling rate between the quantum dots comparable to coupling constants with external electrodes. Effects of inter-dot Coulomb correlations are studied for various values of interaction parameter U. It is shown that the interaction influences transport properties in a pronounced way and apart from the simple Coulomb blockade additional effects can be obtained. When energy levels of two quantum dots are not aligned, the asymmetry in conductance characteristics is closely related to a voltage dependence of population numbers in both quantum dots. For a one bias polarization electrons are well localized in quantum dots in a low voltage region, whereas for the opposite one they are partly delocalized