3,354 research outputs found
Shockley-Ramo theorem and long-range photocurrent response in gapless materials
Scanning photocurrent maps of gapless materials, such as graphene, often
exhibit complex patterns of hot spots positioned far from current-collecting
contacts. We develop a general framework that helps to explain the unusual
features of the observed patterns, such as the directional effect and the
global character of photoresponse. We show that such a response is captured by
a simple Shockley-Ramo-type approach. We examine specific examples and show
that the photoresponse patterns can serve as a powerful tool to extract
information about symmetry breaking, inhomogeneity, chirality, and other local
characteristics of the system.Comment: 7 pgs, 3 fg
Quantum feedback control and classical control theory
We introduce and discuss the problem of quantum feedback control in the context of established formulations of classical control theory, examining conceptual analogies and essential differences. We describe the application of state-observer-based control laws, familiar in classical control theory, to quantum systems and apply our methods to the particular case of switching the state of a particle in a double-well potential
High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins
New mechanism of magnetoresistance, based on tunneling-emission of spin
polarized electrons from ferromagnets (FM) into semiconductors (S) and
precession of electron spin in the semiconductor layer under external magnetic
field, is described. The FM-S-FM structure is considered, which includes very
thin heavily doped (delta-doped) layers at FM-S interfaces. At certain
parameters the structure is highly sensitive at room-temperature to variations
of the field with frequencies up to 100 GHz. The current oscillates with the
field, and its relative amplitude is determined only by the spin polarizations
of FM-S junctions at relatively large bias voltage.Comment: 5 pages, 2 figures, (v2) new plot with a dependence of current J on
magnetic field H added in Fig.2 (top panel), minor amendments in the text;
(v3) minor typos corrected. To appear in Phys. Rev. Letter
The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate
The impacts of surface conditions on the growth of Ge nanowires on a Si (100) substrate are discussed in detail. On SiO2-terminated Si substrates, high-density Ge nanowires can be easily grown. However, on H-terminated Si substrates, growing Ge nanowires is more complex. The silicon migration and the formation of a native SiO2 overlayer on a catalyst surface retard the growth of Ge nanowires. After removing this overlayer in the HF solution, high-density and well-ordered Ge nanowires are grown. Ge nanowires cross vertically and form two sets of parallel nanowires. It is found that nanowires grew along ?110? direction
A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures
Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for
cryogenic nano-scale devices, such as Si quantum devices and superconducting
devices. We present experimental results on a novel device architecture where
the gate electrode is self-aligned with the device channel and overlaps the
source and drain electrodes. This facilitates a sub-5 nm gap between the
source/drain and channel, and no spacers are required. At cryogenic
temperatures, such devices function as p-MOS Tunnel FETs, as determined by the
Schottky barrier at the Al-Si interface, and as a further advantage,
fabrication processes are compatible with both CMOS and superconducting logic
technology.Comment: 6 pages, 4 figures, minor changes from the previous version
Band Offsets at Semiconductor-Oxide Interfaces from Hybrid Density Functional Calculations
Band offsets at semiconductor-oxide interfaces are determined through a
scheme based on hybrid density functionals, which incorporate a fraction
of Hartree-Fock exchange. For each bulk component, the fraction
is tuned to reproduce the experimental band gap, and the conduction
and valence band edges are then located with respect to a reference level. The
lineup of the bulk reference levels is determined through an interface
calculation, and shown to be almost independent of the fraction .
Application of this scheme to the Si-SiO, SiC-SiO, and Si-HfO
interfaces yields excellent agreement with experiment.Comment: 4 pages, 4 figure
Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices
Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. All four possible modes of nonpolar resistive switching were achieved with ON/OFF ratio in the range 10 6-10 8. Detailed current-voltage I-V characteristics analysis suggests that the conduction mechanism in low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in high resistance state which results from the Schottky contacts between the metal electrodes and SiC. ON/OFF ratios exceeding 10 7 over 10 years were also predicted from state retention characterizations. These results suggest promising application potentials for Cu/a-SiC/Au RM
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