2,414 research outputs found
Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells
We present the studies of energy and momentum relaxation dynamics of nonequilibrium holes in GaxIn1−xNyAs1−y/GaAs quantum well modulation doped with Be. Experimental results show that the real-space transfer (RST) of hot holes occurs via thermionic emission from the high-mobility GaInNAs quantum wells into the low-mobility GaAs barriers at a threshold electric field of F ∼ 6 kV/cm at T = 13 K. At this field the hole drift velocity saturates at vd ∼ 1×107 cm/s. A slight increase in the field above the threshold leads to the impact ionization of acceptors in the barriers by the nonequilibrium holes. We observe and model theoretically a negative differential mobility effect induced by RST that occurs at an electric field of F ∼ 7 kV/cm. The observed current surge at electric fields above 7 kV/cm is attributed to the hole multiplication induced by shallow impurity breakdown in the GaAs barrier and impact ionization in the high-field domain regime associated with the packet of RST of holes in the well
Nanostructured electrodes for thermionic and thermo-tunneling devices
Recently, new quantum features have been studied in the area of ridged
quantum wells (RQW). Periodic ridges on the surface of the quantum well layer
impose additional boundary conditions on the electron wave function and reduce
the quantum state density. Electrons, rejected from forbidden quantum states,
have to occupy the states with higher energy. As a result, Fermi energy in RQW
increases and work function (WF) decreases. We investigate low WF electrode,
com-posed from a metal RQW layer and a base substrate. The substrate material
was selected so that electrons were confined to the RQW. The WF value depends
on ridge geometry and electron confinement. We calculate WF in the metal RQW
films grown both on a semiconductor and metal substrates. In the case of
semiconductor substrate, wide band gap materials are preferable as they allow
more reduction in RQW work function. In the case of metal substrate, low Fermi
energy materials are preferable. For most material pairs, the WF was reduced
dramatically. Such structures, can serve as electrodes for room temperature
thermionic and thermotunnel energy converters and coolers.Comment: 8 pages, 5 figures, 2 table
Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3
A scheme is proposed to electrically measure the spin-momentum coupling in
the topological insulator surface state by injection of spin polarized
electrons from silicon. As a first approach, devices were fabricated consisting
of thin (<100nm) exfoliated crystals of Bi2Se3 on n-type silicon with
independent electrical contacts to silicon and Bi2Se3. Analysis of the
temperature dependence of thermionic emission in reverse bias indicates a
barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky
barrier opens the possibility of novel device designs based on sub-band gap
internal photoemission from Bi2Se3 into Si
Spin-wave softening and Hund's coupling in ferromagnetic manganites
Using one-orbital model of hole-doped manganites, we show with the help of
Holstein-Primakov transformation that finite Hund's coupling is responsible for
the spin-wave softening in the ferromagnetic -phase manganites. We obtain an
analytical result for the spin-wave spectrum for \JH\gg t. In the limit of
infinte Hund's coupling, the spectrum is the conventional nearest-neighbor
Heisenberg ferromagnetic spin-wave. The o(t/\JH)-order correction is negative
and thus accounts for the softening near the zone boundary.Comment: 5 pages, 3 figure
Magnetotransport in a two-dimensional electron system in dc electric fields
We report on nonequilibrium transport measurements in a high-mobility
two-dimensional electron system subject to weak magnetic field and dc
excitation. Detailed study of dc-induced magneto-oscillations, first observed
by Yang {\em et al}., reveals a resonant condition that is qualitatively
different from that reported earlier. In addition, we observe dramatic
reduction of resistance induced by a weak dc field in the regime of separated
Landau levels. These results demonstrate similarity of transport phenomena in
dc-driven and microwave-driven systems and have important implications for
ongoing experimental search for predicted quenching of microwave-induced
zero-resistance states by a dc current.Comment: Revised version, to appear in Phys. Rev.
The Kemeny Constant For Finite Homogeneous Ergodic Markov Chains
A quantity known as the Kemeny constant, which is used to measure
the expected number of links that a surfer on the World Wide
Web, located on a random web page, needs to follow before reaching
his/her desired location, coincides with the more well known notion of
the expected time to mixing, i.e., to reaching stationarity of an ergodic Markov chain. In this paper we present a new formula for the Kemeny
constant and we develop several perturbation results for the constant,
including conditions under which it is a convex function. Finally, for
chains whose transition matrix has a certain directed graph structure
we show that the Kemeny constant is dependent only on the common
length of the cycles and the total number of vertices and not on the
specific transition probabilities of the chain
Incoherent Transport through Molecules on Silicon in the vicinity of a Dangling Bond
We theoretically study the effect of a localized unpaired dangling bond (DB)
on occupied molecular orbital conduction through a styrene molecule bonded to a
n++ H:Si(001)-(2x1) surface. For molecules relatively far from the DB, we find
good agreement with the reported experiment using a model that accounts for the
electrostatic contribution of the DB, provided we include some dephasing due to
low lying phonon modes. However, for molecules within 10 angstrom to the DB, we
have to include electronic contribution as well along with higher dephasing to
explain the transport features.Comment: 9 pages, 5 figure
Space-charge mechanism of aging in ferroelectrics: an exactly solvable two-dimensional model
A mechanism of point defect migration triggered by local depolarization
fields is shown to explain some still inexplicable features of aging in
acceptor doped ferroelectrics. A drift-diffusion model of the coupled charged
defect transport and electrostatic field relaxation within a two-dimensional
domain configuration is treated numerically and analytically. Numerical results
are given for the emerging internal bias field of about 1 kV/mm which levels
off at dopant concentrations well below 1 mol%; the fact, long ago known
experimentally but still not explained. For higher defect concentrations a
closed solution of the model equations in the drift approximation as well as an
explicit formula for the internal bias field is derived revealing the plausible
time, temperature and concentration dependencies of aging. The results are
compared to those due to the mechanism of orientational reordering of defect
dipoles.Comment: 8 pages, 4 figures. accepted to Physical Review
Nonequilibrium Green's-Function Approach to the Suppression of Rectification at Metal--Mott-Insulator Interfaces
Suppression of rectification at metal--Mott-insulator interfaces, which is
previously shown by numerical solutions to the time-dependent Schr\"odinger
equation and experiments on real devices, is reinvestigated theoretically by
nonequilibrium Green's functions. The one-dimensional Hubbard model is used for
a Mott insulator. The effects of attached metallic electrodes are incorporated
into the self-energy. A scalar potential originating from work-function
differences and satisfying the Poisson equation is added to the model. For the
electron density, we decompose it into three parts. One is obtained by
integrating the local density of states over energy to the midpoint of the
electrodes' chemical potentials. The others, obtained by integrating lesser
Green's functions, are due to the couplings with the electrodes and correspond
to an inflow and an outflow of electrons. In Mott insulators, incoming
electrons and holes are extended over the whole system, avoiding further
accumulation of charge relative to the case without bias. This induces
collective charge transport and results in the suppression of rectification.Comment: 18 pages, Figs. 1(b), 2, and 8 replaced. Corrected typo
Self-consistent model of unipolar transport in organic semiconductor diodes: accounting for a realistic density-of-states distribution
A self-consistent, mean-field model of charge-carrier injection and unipolar
transport in an organic semiconductor diode is developed utilizing the
effective transport energy concept and taking into account a realistic
density-of-states distribution as well as the presence of trap states in an
organic material. The consequences resulting from the model are discussed
exemplarily on the basis of an indium tin oxide/organic semiconductor/metallic
conductor structure. A comparison of the theory to experimental data of a
unipolar indium tin oxide/poly-3-hexyl-thiophene/Al device is presented.Comment: 6 pages, 2 figures; to be published in Journal of Applied Physic
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