2 research outputs found
Installation aeraulique de chauffage et de rafraichissement adiabatique Performances reelles - modele de simulation - validation experimentale - bilans energetiques simules
Available at INIST (FR), Document Supply Service, under shelf-number : RP 400 (1706) / INIST-CNRS - Institut de l'Information Scientifique et TechniqueSIGLEFRFranc
Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor
We investigate the gate-induced onset
of few-electron regime through
the undoped channel of a silicon nanowire field-effect transistor.
By combining low-temperature transport measurements and self-consistent
calculations, we reveal the formation of one-dimensional conduction
modes localized at the two upper edges of the channel. Charge traps
in the gate dielectric cause electron localization along these edge
modes, creating elongated quantum dots with characteristic lengths
of ∼10 nm. We observe single-electron tunneling across two
such dots in parallel, specifically one in each channel edge. We identify
the filling of these quantum dots with the first few electrons, measuring
addition energies of a few tens of millielectron volts and level spacings
of the order of 1 meV, which we ascribe to the valley orbit splitting.
The total removal of valley degeneracy leaves only a 2-fold spin degeneracy,
making edge quantum dots potentially promising candidates for silicon
spin qubits