Hybrid Silicon-Organic Heterojunction Structures for Photovoltaic Applications

The concept for inorganic-organic device is an attractive technology to develop devices with better characteristics and functionality due to the complementary advantages of inorganic and organic materials. This chapter provides an overview of the principal requirements for organic and inorganic semiconductor properties and their fabrication processes and focus on the compatibility between low temperature plasma enhanced chemical vapor deposition (PECVD) and polymer organic materials deposition. The concept for inorganic-organic device was validated with the fabrication of three hybrid thin film photovoltaic structures, based on hydrogenated silicon (Si:H), organic poly(3-hexythiophene): methano-fullerenephenyl-C61-butyric-acid-methyl-ester (P3HT:PCBM), and poly(3,4ethylenedioxythiophene): poly(4-styrenesulfonate) (PEDOT:PSS) films. Optoelectronic characteristics, performance characteristics, and interfaces of the different configurations aspects are discussed. Hybrid ITO/PEDOT:PSS/(i)Si:H/(n)Si:H structure results in a remarkably high short circuit current density as large as 17.74 mA/cm2, which is higher than the values in organic or inorganic reference samples. Although some hybrid structures demonstrated substantial improvement of performance, other hybrid structures showed poor performance, further R&D efforts seem to be promising, and should be focused on deeper study of organic materials and related interface properties

Study of Si and Ge Atoms Termination Using H-Dilution in SiGe:H Alloys Deposited by Radio Frequency (13.56 MHz) Plasma Discharge at Low Temperature

In this work, we present the study of the atomic composition in amorphous SiXGeY:HZ films deposited by radio frequency (RF—13.56 MHz) plasma discharge at low deposition temperature. A study and control of Si and Ge atoms termination using H-dilution in SiGe:H alloys deposited by RF plasma discharge was conducted and we made a comparison with low-frequency plasma discharge studies. Solid contents of the main elements and contaminants were determined by SIMS technique. It was found that for low dilution rates from RH = 9 to 30, the germanium content in the solid phase strongly depends on the hydrogen dilution and varies from Y = 0.49 to 0.68. On the other hand, with a higher presence of hydrogen in the mixture, the germanium content does not change and remains close to the value of Y = 0.69. The coefficient of Ge preferential incorporation depended on RH and varied from PGe = 0.8 to 4.3. Also, the termination of Si and Ge atoms with hydrogen was studied using FTIR spectroscopy. Preferential termination of Si atoms was observed in the films deposited with low RH < 20, while preferential termination of Ge atoms was found in the films deposited with high RH > 40. In the range of 20 < RH < 40, hydrogen created chemical bonds with both Si and Ge atoms without preference

AZO/PEDOT:PSS Polymer Frontal Interface Deposited on Flexible Substrates for a-Si:H Photovoltaic Applications

Thin-film hybrid organic-inorganic photovoltaic structures based on hydrogenated silicon (Si:H), poly(3,4ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) polymer Al-doped ZnO (AZO) films deposited on different types of flexible substrates have been fabricated and investigated. The compatibility of the polymer and inorganic materials regimes and deposition techniques used for device fabrication has been demonstrated on flexible substrates. Morphological characteristics of transparent Al-doped ZnO (AZO) films deposited on substrates have been measured by atomic force microscopy. Electronic characteristics of the fabricated photovoltaic structures have been measured and analyzed for different thicknesses of the transparent electrodes and different substrate types. Photovoltaic hybrid structure on polyethylene naphthalate (PEN) substrate showed the best characteristics: short circuit current density Jsc = 9.79 mA/cm2, open circuit voltage Uoc = 565 mV, and PCE η = 1.3%. To analyze the mechanisms governing the device performance, short circuit current density spectral dependence of the devices fabricated on different types of flexible substrates has been measured. As demonstrated by our analysis, the structures on PEN substrates, besides better substrate transmittance, also show better junction properties

Nanostructural Modification of PEDOT:PSS for High Charge Carrier Collection in Hybrid Frontal Interface of Solar Cells

In this work, we propose poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) material to form a hybrid heterojunction with amorphous silicon-based materials for high charge carrier collection at the frontal interface of solar cells. The nanostructural characteristics of PEDOT:PSS layers were modified using post-treatment techniques via isopropyl alcohol (IPA). Atomic force microscopy (AFM), Fourier-transform infrared (FTIR), and Raman spectroscopy demonstrated conformational changes and nanostructural reorganization in the surface of the polymer in order to tailor hybrid interface to be used in the heterojunctions of inorganic solar cells. To prove this concept, hybrid polymer/amorphous silicon solar cells were fabricated. The hybrid PEDOT:PSS/buffer/a-Si:H heterojunction demonstrated high transmittance, reduction of electron diffusion, and enhancement of the internal electric field. Although the structure was a planar superstrate-type configuration and the PEDOT:PSS layer was exposed to glow discharge, the hybrid solar cell reached high efficiency compared to that in similar hybrid solar cells with substrate-type configuration and that in textured well-optimized amorphous silicon solar cells fabricated at low temperature. Thus, we demonstrate that PEDOT:PSS is fully tailored and compatible material with plasma processes and can be a substitute for inorganic p-type layers in inorganic solar cells and related devices with improvement of performance and simplification of fabrication process

Cytochrome c is transformed from anti- to pro-oxidant when interacting with truncated oncoprotein prothymosin α

AbstractMany apoptotic signals are known to induce release to cytosol of cytochrome c, a small mitochondrial protein with positively charged amino acid residues dominating over negatively charged ones. On the other hand, in this group, it was shown that prothymosin α (PT), a small nuclear protein where 53 of 109 amino acid residues are negatively charged, is truncated to form a protein of 99 amino acid residues which accumulates in cytosol during apoptosis [FEBS Lett. 467 (2000) 150]. It was suggested that positively charged cytochrome c and negatively charged truncated prothymosin α (tPT), when meeting in cytosol, can interact with each other. In this paper, such an interaction is shown. (1) Formation of cytochrome c⋅tPT complex is demonstrated by a blot-overlay assay. (2) Analytical centrifugation of solution containing cytochrome c and tPT reveals formation of complexes of molecular masses higher than those of these proteins. The masses increase when the cytochrome c/tPT ratio increases. High concentration of KCl prevents the complex formation. (3) In the complexes formed, cytochrome c becomes autoxidizable; its reduction by superoxide or ascorbate as well as its operation as electron carrier between the outer and inner mitochondrial membranes appear to be inhibited. (4) tPT inhibits cytochrome c oxidation by H2O2, catalyzed by peroxidase. Thus, tPT abolishes all antioxidant functions of cytochrome c which, in the presence of tPT, becomes in fact a pro-oxidant. A possible role of tPT in the development of reactive oxygen species- and cytochrome c-mediated apoptosis is discussed

Abstracts of the First Eurasian Conference; The Coronavirus Pandemic and Critical ICT Infrastructure

While the world is struggling with COVID-19, the ICT industry seeks to play a constructive role in combating the spread of the virus. This book contains the abstracts of the papers presented at The First Eurasian Conference; The Coronavirus Pandemic and Critical ICT Infrastructure (PANDEMIC-ICT-2020) organized by AMIR Technical Services LLC, Tbilisi, Georgia held on November 28-30, 2020. Conference Title: The Coronavirus Pandemic and Critical ICT InfrastructureConference Acronym: PANDEMIC-ICT-2020Conference Date: 28-30 November 2020Conference Location: Online (Virtual Mode)Conference Organizer: AMIR Technical Services LLC, Tbilisi, Georgi