17 research outputs found
Molecular dynamics for irradiation driven chemistry:application to the FEBID process
A new molecular dynamics (MD) approach for computer simulations of irradiation driven
chemical transformations of complex molecular systems is suggested. The approach is based
on the fact that irradiation induced quantum transformations can often be treated as
random, fast and local processes involving small molecules or molecular fragments. We
advocate that the quantum transformations, such as molecular bond breaks, creation and
annihilation of dangling bonds, electronic charge redistributions, changes in molecular
topologies, etc., could be incorporated locally into the molecular force fields that
describe the classical MD of complex molecular systems under irradiation. The proposed
irradiation driven molecular dynamics (IDMD) methodology is designed for the molecular
level description of the irradiation driven chemistry. The IDMD approach is implemented
into the MBN Explore
Ultra-relativistic electron beams deflection by quasi-mosaic crystals
This paper provides an explanation of the key effects behind the deflection
of ultra-relativistic electron beams by means of oriented quasi-mosaic Bent
Crystals (qmBC). It is demonstrated that accounting for specific geometry of
the qmBC and its orientation with respect to a collimated electron beam, its
size and emittance is essential for an accurate quantitative description of
experimental results on the beam deflection by such crystals. In an exemplary
case study a detailed analysis of the recent experiment at the SLAC facility is
presented. The methodology developed has enabled to understand the
peculiarities in the measured distributions of the deflected electrons. This
achievement constitutes an important progress in the efforts towards the
practical realization of novel gamma-ray crystal-based light sources and puts
new challenges for the theory and experiment in this research area.Comment: 6 pages, 4 figures plus Supplemental Materia
Simulation of Ultra-Relativistic Electrons and Positrons Channeling in Crystals with MBN Explorer
A newly developed code, implemented as a part of the \MBNExplorer package
\cite{MBN_ExplorerPaper,MBN_ExplorerSite} to simulate trajectories of an
ultra-relativistic projectile in a crystalline medium, is presented. The motion
of a projectile is treated classically by integrating the relativistic
equations of motion with account for the interaction between the projectile and
crystal atoms. The probabilistic element is introduced by a random choice of
transverse coordinates and velocities of the projectile at the crystal entrance
as well as by accounting for the random positions of the atoms due to thermal
vibrations. The simulated trajectories are used for numerical analysis of the
emitted radiation. Initial approbation and verification of the code have been
carried out by simulating the trajectories and calculating the radiation
emitted by \E=6.7 GeV and \E=855 MeV electrons and positrons in oriented
Si(110) crystal and in amorphous silicon. The calculated spectra are compared
with the experimental data and with predictions of the Bethe-Heitler theory for
the amorphous environment.Comment: 41 pages, 11 figures. Initially submitted on Dec 29, 2012 to Phys.
Rev.
Irradiation driven molecular dynamics simulation of the FEBID process for Pt(PF)
This paper presents a detailed computational protocol for atomistic
simulation of the formation and growth of metal-containing nanostructures
during the Focused Electron Beam Induced Deposition (FEBID) process. The
protocol is based upon the Irradiation-Driven Molecular Dynamics (IDMD) - a
novel and general methodology for computer simulations of irradiation-driven
transformations of complex molecular systems by means of the advanced software
packages MBN Explorer and MBN Studio. Atomistic simulations performed following
the formulated protocol provide valuable insights into the fundamental
mechanisms of electron-induced precursor fragmentation and the related
mechanism of nanostructure formation and growth using FEBID, which are
essential for the further advancement of FEBID-based nanofabrication. The
developed computational methodology is general and applicable to different
precursor molecules, substrate types, irradiation regimes, etc. The methodology
can also be adjusted to simulate the nanostructure formation by other
nanofabrication techniques using electron beams, such as direct electron beam
lithography. In the present study, the methodology is applied to the IDMD
simulation of the FEBID of Pt(PF) - a widely studied precursor molecule
- on a SiO surface. The simulations reveal the processes driving the
initial phase of nanostructure formation during FEBID, including nucleation of
Pt atoms, formation of small metal clusters on the surface, followed by their
aggregation and the formation of dendritic platinum nanostructures. The
analysis of the simulation results provides space resolved relative metal
content, height and the growth rate of the deposits which represent valuable
reference data for the experimental characterization of the nanostructures
grown by FEBID.Comment: 19 pages, 12 figure
Dopant concentration effects on Si 1 - x Ge x crystals for emerging light-source technologies: a molecular dynamics study
In this study, we conduct atomistic-level molecular dynamics simulations on fixed-sized silicon-germanium (Si1-xGex) crystals to elucidate the effects of dopant concentration on the crystalline inter-planar distances. Our calculations consider a range of Ge dopant concentrations between pure Si (0%) and 15%, and for both the optimised system state and a temperature of 300K. We observe a linear relationship between Ge concentration and inter-planar distance and lattice constant, in line with the approximation of Vegard’s Law, and other experimental and computational results. These findings will be employed in conjunction with future studies to establish precise tolerances for use in crystal growth, crucial for the manufacture of crystals intended for emerging gamma-ray crystal-based light source technologies
A small-amplitude crystalline undulator based on 20Â GeV electrons and positrons: Simulations
This paper presents the results of numerical simulations of a crystalline undulator based on the channeling of 20Â GeV electrons and positrons. The device considered is characterized by a small amplitude and a short period of periodic bending. Calculations have been performed accounting for all-atom interactions using the MBN Explorer software package. The effect of low crystal thickness (less than a channeling oscillations period) on radiation spectrum was studied. A new scheme to product a high-energy radiation was proposed. It is based on short-period small-amplitude crystalline undulator and allows decreasing the intensity of the non-undulator part of the spectrum
Electron and positron propagation in straight and periodically bent axial and planar silicon channels
In this paper the results of simulations of axial and planar channeling of electrons and positrons in straight and periodically bent Si crystals are presented. Simulations with direct calculation of trajectories of projectiles accounting for all-atom interactions were carried out using the MBN Explorer software package. The full atomistic approach for particle trajectories simulation allows to quantitatively compare axial and planar channeling processes. The results of the simulations show significantly lower dechanneling length and number of channeling projectiles in the axial channeling case. For this case the dependence of characteristics of the channeling process on the choice of an axis direction and on a direction of the crystal bending has been investigated
All-atom relativistic molecular dynamics simulations of channeling and radiation processes in oriented crystals
We review achievements made in recent years in the field of numerical
modeling of ultra-relativistic projectiles propagation in oriented crystals,
radiation emission and related phenomena. This topic is highly relevant to the
problem of designing novel gamma-ray light sources based on the exposure of
oriented crystals to the beams of ultra-relativistic charged particles. The
paper focuses on the approaches that allow for advanced computation exploration
beyond the continuous potential and the binary collisions frameworks. A
comprehensive description of the multiscale all-atom relativistic molecular
dynamics approach implemented in the MBN Explorer package is given. Several
case studies related to modeling of ultra-relativistic projectiles (electrons,
positron and pions) channeling and photon emission in oriented straight, bent
and periodically bent crystals are presented. In most cases, the input data
used in the simulations, such as crystal orientation and thickness, the bending
radii, periods and amplitudes, as well as the energies of the projectiles, have
been chosen to match the parameters used in the accomplished and the ongoing
experiments. Wherever available the results of calculations are compared with
the experimental data and/or the data obtained by other numerical means.Comment: 60 pages, 34 figure
Extremely brilliant crystal-based light sources
The feasibility of novel gamma-ray light sources based on the channeling phenomenon of ultrarelativistic charged particles in oriented crystals is demonstrated by means of rigorous numerical modeling that accounts for the interaction of a projectile with all atoms of the crystalline environment. Accurate predictions are provided for the brilliance of radiation emitted in a diamond-based crystalline undulator by a 10 GeV positron beam available at present at the SLAC facility. It is shown that in the photon energy range MeV the brilliance is higher than that predicted in the Gamma Factory proposal for CERN. Novel crystal-based light sources may have a broad range of applications