8 research outputs found
Frequency response of metal-oxide memristors
Memristors have been at the forefront of nanoelectronics research for the last decade, offering a valuable component to reconfigurable computing. Their attributes have been studied extensively along with applications that leverage their state-dependent programmability in a static fashion. However, practical applications of memristor-based AC circuits have been rather sparse, with only a few examples found in the literature where their use is emulated at higher frequencies. In this work, we study the behavior of metal-oxide memristors under an AC perturbation in a range of frequencies, from 10^3 to 10^7 Hz. Metal-oxide memristors are found to behave as RC low-pass filters and they present a variable cut-off frequency when their state is switched, thus providing a window of reconfigurability when used as filters. We further study this behaviour across distinct material systems and we show that the usable reconfigurability window of the devices can be tailored to encompass specific frequency ranges by amending the devices' capacitance. This study extends current knowledge on metal-oxide memristors by characterising their frequency dependent characteristics, providing useful insights for their use in reconfigurable AC circuits
Dataset for: Frequency Response of Metal-Oxide Memristors
Dataset for peer-reviewed article titled "Frequency Response of Metal-Oxide Memristors" accepted in IEEE Transactions on Electron Devices
Includes data used to produce the figures seen in this article.</span
Robust High-Capacitance Polymer Gate Dielectrics for Stable Low-Voltage Organic Field-Effect Transistor Sensors
High-Performance All-Printed Amorphous Oxide FETs and Logics with Electronically Compatible Electrode/Channel Interface
Oxide
semiconductors typically show superior device performance
compared to amorphous silicon or organic counterparts, especially
when they are physical vapor deposited. However, it is not easy to
reproduce identical device characteristics when the oxide field-effect
transistors (FETs) are solution-processed/printed; the level of complexity
further intensifies with the need to print the passive elements as
well. Here, we developed a protocol for designing the most electronically
compatible electrode/channel interface based on the judicious material
selection. Exploiting this newly developed fabrication schemes, we
are now able to demonstrate high-performance all-printed FETs and
logic circuits using amorphous indium–gallium–zinc oxide
(a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes, and
composite solid polymer electrolyte as the gate insulator. Interestingly,
all-printed FETs demonstrate an optimal electrical performance in
terms of threshold voltages and device mobility and may very well
be compared with devices fabricated using sputtered ITO electrodes.
This observation originates from the selection of electrode/channel
materials from the same transparent semiconductor oxide family, resulting
in the formation of In–Sn–Zn–O (ITZO)-based-diffused
a-IGZO–ITO interface that controls doping density while ensuring
high electrical performance. Compressive spectroscopic studies reveal
that Sn doping-mediated excellent band alignment of IGZO with ITO
electrodes is responsible for the excellent device performance observed.
All-printed n-MOS-based logic circuits have also been demonstrated
toward new-generation portable electronics
A General Route toward Complete Room Temperature Processing of Printed and High Performance Oxide Electronics
Critical prerequisites for solution-processed/printed field-effect transistors (FETs) and logics are excellent electrical performance including high charge carrier mobility, reliability, high environmental stability and low/preferably room temperature processing. Oxide semiconductors can often fulfill all the above criteria, sometimes even with better promise than their organic counterparts, except for their high process temperature requirement. The need for high annealing/curing temperatures renders oxide FETs rather incompatible to inexpensive, flexible substrates, which are commonly used for high-throughput and roll-to-roll additive manufacturing techniques, such as printing. To overcome this serious limitation, here we demonstrate an alternative approach that enables completely room-temperature processing of printed oxide FETs with device mobility as large as 12.5 cm(2)/(V s). The key aspect of the present concept is a chemically controlled curing process of the printed nanoparticle ink that provides surprisingly dense thin films and excellent interparticle electrical contacts. In order to demonstrate the versatility of this approach, both n-type (In2O3) and p-type (Cu2O) oxide semiconductor nanoparticle dispersions are prepared to fabricate, inkjet printed and completely room temperature processed, all-oxide complementary metal oxide semiconductor (CMOS) invertors that can display significant signal gain (similar to 18) at a supply voltage of only 1.5 V