1 research outputs found
Mo<sub>1–<i>x</i></sub>W<sub><i>x</i></sub>Se<sub>2</sub>‑Based Schottky Junction Photovoltaic Cells
We
developed Schottky junction photovoltaic cells based on multilayer
Mo<sub>1–<i>x</i></sub>W<sub><i>x</i></sub>Se<sub>2</sub> with <i>x</i> = 0, 0.5, and 1. To generate
built-in potentials, Pd and Al were used as the source and drain electrodes
in a lateral structure, and Pd and graphene were used as the bottom
and top electrodes in a vertical structure. These devices exhibited
gate-tunable diode-like current rectification and photovoltaic responses.
Mo<sub>0.5</sub>W<sub>0.5</sub>Se<sub>2</sub> Schottky diodes with
Pd and Al electrodes exhibited higher photovoltaic efficiency than
MoSe<sub>2</sub> and WSe<sub>2</sub> devices with Pd and Al electrodes,
likely because of the greater adjusted band alignment in Mo<sub>0.5</sub>W<sub>0.5</sub>Se<sub>2</sub> devices. Furthermore, we showed that
Mo<sub>0.5</sub>W<sub>0.5</sub>Se<sub>2</sub>-based vertical Schottky
diodes yield a power conversion efficiency of ∼16% under 532
nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating
their remarkable potential for photovoltaic applications