Influence of Gas Adsorption and Gold Nanoparticles on the Electrical Properties of CVD-Grown MoS₂ Thin Films

Molybdenum disulfide (MoS₂) has increasingly attracted attention from researchers and is now one of the most intensively explored atomic-layered two-dimensional semiconductors. Control of the carrier concentration and doping type of MoS₂ is crucial for its application in electronic and optoelectronic devices. Because the MoS₂ layers are atomically thin, their transport characteristics may be very sensitive to ambient gas adsorption and the resulting charge transfer. We investigated the influence of the ambient gas (N₂, H₂/N₂, and O₂) choice on the resistance (<i>R</i>) and surface work function (WF) of trilayer MoS₂ thin films grown via chemical vapor deposition. We also studied the electrical properties of gold (Au)-nanoparticle (NP)-coated MoS₂ thin films; their <i>R</i> value was found to be 2 orders of magnitude smaller than that for bare samples. While the WF largely varied for each gas, <i>R</i> was almost invariant for both the bare and Au-NP-coated samples regardless of which gas was used. Temperature-dependent transport suggests that variable range hopping is the dominant mechanism for electrical conduction for bare and Au-NP-coated MoS₂ thin films. The charges transferred from the gas adsorbates might be insufficient to induce measurable <i>R</i> change and/or be trapped in the defect states. The smaller WF and larger localization length of the Au-NP-coated sample, compared with the bare sample, suggest that more carriers and less defects enhanced conduction in MoS₂