Highly sensitive InGaAs=InAlAs quantum wire photo-FET

An InGaAs=InAlAs quantum wire photo-FET has been fabricated on a V-grooved (311) InP substrate by atomic hydrogen assisted molecular beam epitaxy. The room-temperature photosensitivity of the quantum wire photo-FET reached 350 kA=W near a wavelength of 700 nm at a drain-source voltage of 1 V. Introduction: The pin diode is the simplest of the commercially available photodetectors in terms of device structure and is suitable for application to a detector array. However, its sensitivity is limited to about 1 A=W, which is the quantum efficiency of the photo-absorption material. In such a case, the detection limit is determined by the additional electronic noise induced by the current amplifier. In contrast, an avalanche photodiode (APD) and a photo-multiplier (PMT) have higher sensitivity because of their amplification mechanism, but they are not very suitable for multi-pixel arrays because of their inferior uniformity and higher bias voltage. The bias voltages of an APD ($100 V) and a PMT ($1 kV) may easily damage a silicon charge amplifier within the same package if the element breaks down. A phototransistor is a good candidate for a highly sensitive photodetector. In a metal oxide semiconductor field effect transistor (MOSFET), photo-generated carriers are accumulated underneath the gate region and modulate the majority current. This device is called a photo-MOSFET and it is widely used for optically isolated relays and image sensors. Compound semiconductor materials are essential if we are to extend the spectral range and sensitivity of photodetectors by flexibly designing the bandgap profile and achieving high carrier mobility. It is reported that high electron mobility transistors (HEMTs) have a responsivity of about 3 kA=W as a photodetecto

187P Optimal treatment strategy of first-line oxaliplatin (Oxa)-containing therapy in metastatic colorectal cancer (mCRC): A trial-level meta-analysis

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EP-1391: Total skin irradiation using helical tomotherapy: a novel experience and report of three cases

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Contribution of the nucleon-hyperon reaction channels to K−^- production in proton-nucleus collisions

The cross sections for producing K$^-$ mesons in nucleon-hyperon elementary processes are estimated assuming one-pion exchange and using the experimentally known pion-hyperon cross sections. The results are implemented in a transport model which is applied to calculation of proton-nucleus collisions. In significant difference to earlier estimates for heavy-ion collisions the inclusion of the nucleon-hyperon cross section roughly doubles the K$^-$ production in near-threshold proton-nucleus collisions

Cross-Field Plasma Acceleration and Potential Formation Induced by Electromagnetic Waves in a Relativistic Magnetized Plasma

Abstract It has been proved theoretically that particle acceleration along and across a magnetic field and electric field across a magnetic field can be induced by nonlinear Landau damping of almost perpendicularly propagating electrostatic waves in a relativistic magnetized plasma