Heterogeneous Integration for Reduced Phase Noise and Improved Reliability of Semiconductor Lasers

Significant savings in cost, power and space are possible in existing optical data transmission networks, sensors and metrology equipment through photonic integration. Photonic integration can be broadly classified into two categories, hybrid and monolithic integration. The former involves assembling multiple single functionality optical devices together into a single package including any optical coupling and/or electronic connections. On the other hand monolithic integration assembles many devices or optical functionalities on a single chip so that all the optical connections are on chip and require no external alignment. This provides a substantial improvement in reliability and simplifies testing. Monolithic integration has been demonstrated on both indium phosphide (InP) and silicon (Si) substrates. Integration on larger 300mm Si substrates can further bring down the cost and has been a major area of research in recent years. Furthermore, with increasing interest from industry, the hybrid silicon platform is emerging as a new technology for integrating various active and passive optical elements on a single chip. This is both in the interest of bringing down manufacturing cost through scaling along with continued improvement in performance and to produce multi-functional photonic integrated circuits (PIC).The goal of this work is twofold. First, we show four laser demonstrations that use the hybrid silicon platform to lower phase noise due to spontaneous emission, based on the following two techniques, viz. confinement factor reduction and negative optical feedback. The first two demonstrations are of mode-locked lasers and the next two are of tunable lasers. Some of the key results include; (a) 14dB white frequency noise reduction of a 20GHz radio-frequency (RF) signal from a harmonically mode-locked long cavity laser with greater than 55dB supermode noise suppression, (b) 8dB white frequency noise reduction from a colliding pulse mode-locked laser by reducing the number of quantum wells and a further 6dB noise reduction using coherent photon seeding from long on-chip coupled cavity, (c) linewidth reduction of a tunable laser down to 160kHz using negative optical feedback from coupled ring resonator mirrors, and (d) linewidth reduction of a widely tunable laser down to 50kHz using on-chip coupled cavity feedback effect.Second, we present the results of a reliability study conducted to investigate the influence of molecular wafer bonding between Si and InP on the lifetime of distributed feedback lasers, a common laser source used in optical communication. No degradation in lasing threshold or slope efficiency was observed after aging the lasers for 5000hrs at 70°C and 2500hrs at 85°C. However, among the three chosen bonding interface layer options, the devices with an interface superlattice layer showed a higher yield for lasers and lower dark current values in the on-chip monitor photodiodes after aging

Heterogeneous Integration for Reduced Phase Noise and Improved Reliability of Semiconductor Lasers

Significant savings in cost, power and space are possible in existing optical data transmission networks, sensors and metrology equipment through photonic integration. Photonic integration can be broadly classified into two categories, hybrid and monolithic integration. The former involves assembling multiple single functionality optical devices together into a single package including any optical coupling and/or electronic connections. On the other hand monolithic integration assembles many devices or optical functionalities on a single chip so that all the optical connections are on chip and require no external alignment. This provides a substantial improvement in reliability and simplifies testing. Monolithic integration has been demonstrated on both indium phosphide (InP) and silicon (Si) substrates. Integration on larger 300mm Si substrates can further bring down the cost and has been a major area of research in recent years. Furthermore, with increasing interest from industry, the hybrid silicon platform is emerging as a new technology for integrating various active and passive optical elements on a single chip. This is both in the interest of bringing down manufacturing cost through scaling along with continued improvement in performance and to produce multi-functional photonic integrated circuits (PIC).The goal of this work is twofold. First, we show four laser demonstrations that use the hybrid silicon platform to lower phase noise due to spontaneous emission, based on the following two techniques, viz. confinement factor reduction and negative optical feedback. The first two demonstrations are of mode-locked lasers and the next two are of tunable lasers. Some of the key results include; (a) 14dB white frequency noise reduction of a 20GHz radio-frequency (RF) signal from a harmonically mode-locked long cavity laser with greater than 55dB supermode noise suppression, (b) 8dB white frequency noise reduction from a colliding pulse mode-locked laser by reducing the number of quantum wells and a further 6dB noise reduction using coherent photon seeding from long on-chip coupled cavity, (c) linewidth reduction of a tunable laser down to 160kHz using negative optical feedback from coupled ring resonator mirrors, and (d) linewidth reduction of a widely tunable laser down to 50kHz using on-chip coupled cavity feedback effect.Second, we present the results of a reliability study conducted to investigate the influence of molecular wafer bonding between Si and InP on the lifetime of distributed feedback lasers, a common laser source used in optical communication. No degradation in lasing threshold or slope efficiency was observed after aging the lasers for 5000hrs at 70°C and 2500hrs at 85°C. However, among the three chosen bonding interface layer options, the devices with an interface superlattice layer showed a higher yield for lasers and lower dark current values in the on-chip monitor photodiodes after aging

Integrated Microwave Photonic Isolators: Theory, Experimental Realization and Application in a Unidirectional Ring Mode-Locked Laser Diode

A novel integrated microwave photonic isolator is presented. It is based on the timed drive of a pair of optical modulators, which transmit a pulsed or oscillating optical signal with low loss, when driven in phase. A signal in the reverse propagation direction will find the modulators out of phase and, hence, will experience high loss. Optical and microwave isolation ratios were simulated to be in the range up to 10 dB and 20 dB, respectively, using parameters representative for the indium phosphide platform. The experimental realization of this device in the hybrid silicon platform showed microwave isolation in the 9 dB–22 dB range. Furthermore, we present a design study on the use of these isolators inside a ring mode-locked laser cavity. Simulations show that unidirectional operation can be achieved, with a 30–50-dB suppression of the counter propagating mode, at limited driving voltages. The potentially low noise and feedback-insensitive operation of such a laser makes it a very promising candidate for use as on-chip microwave or comb generators

Widely-Tunable Ring-Resonator Semiconductor Lasers

Chip-scale widely-tunable lasers are important for both communication and sensing applications. They have a number of advantages, such as size, weight, and cost compared to mechanically tuned counterparts. Furthermore, they allow for integration in more complex integrated photonic chips to realize added functionality. Here we give an extensive overview of such lasers realized by utilizing ring resonators inside the laser cavity. Use of ring resonators for tuning allows for wide-tunability by exploiting the Vernier effect, and at the same time improves the laser linewidth, as effective cavity length is increased at ring resonance. In this review, we briefly introduce basic concepts of laser tuning using ring resonators. Then, we study a number of laser cavity configurations that utilize two ring resonators, and compare their tuning performance. We introduce a third ring resonator to the laser cavity, study three different cavity configurations utilizing three ring resonators, and select the optimal one, for which we show that laser tuning is straightforward, provided there are monitor photodetectors on-chip. Finally, we give a literature overview showing superior linewidth performance of ring-based widely-tunable lasers