33 research outputs found
Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters
We present experimental investigations of the effect of rapid thermal treatment with incoherent IR radiation, as well as electric-spark and electron-beam treatments, on the electric parameters of Ni(Ti) n-21R(6H)-SiC contacts. The results obtained show that pulse thermal treatment is an efficient technique for local change of parameters of heterogeneous metal/silicon carbide structures
SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an interface TiBx(ZrBx)-SiC after rapid thermal annealing at 800°N for 60 s