33 research outputs found

    Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters

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    We present experimental investigations of the effect of rapid thermal treatment with incoherent IR radiation, as well as electric-spark and electron-beam treatments, on the electric parameters of Ni(Ti) n-21R(6H)-SiC contacts. The results obtained show that pulse thermal treatment is an efficient technique for local change of parameters of heterogeneous metal/silicon carbide structures

    SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

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    Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an interface TiBx(ZrBx)-SiC after rapid thermal annealing at 800°N for 60 s

    In-situ insulator surface charge measurements in dielectric bridged vacuum gaps using an electrostatic probe

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    X-ray emission and prebreakdown currents in plain and dielectric bridged vacuum gaps under DC excitation

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    Tribological study of WC produced by plasma pressure compaction

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    Surface flashover effects in AlGaN/GaN HFETs

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