1 research outputs found
Instantaneous Gelation of a Self-Healable Wide-Bandgap Semiconducting Supramolecular Mg(II)-Metallohydrogel: An Efficient Nonvolatile Memory Design with Supreme Endurance
An efficient strategy for room-temperature, atmospheric-pressure
synthesis of a supramolecular metallohydrogel of the Mg(II) ion, i.e.,
Mg@3AP, using the metal-coordinating organic ligand 3-amino-1-propanol
as a low-molecular-weight gelator (LMWG) in a water medium has been
developed. Through a rheological analysis, we looked into the mechanical
properties of the supramolecular Mg(II)-metallohydrogel. The self-healing
nature of the metallohydrogel is confirmed along with the thixotropic
characteristics. Investigation using field emission scanning electron
microscopy revealed the hierarchical network of the supramolecular
metallohydrogel. The EDX elemental mapping confirms the primary chemical
constituents of the metallohydrogel. The possible metallohydrogel
formation strategy has been analyzed through FT-IR spectroscopic studies.
In this work, Schottky diode structures in a metal–semiconductor–metal
geometry structures based on a magnesium(II) metallohydrogel (Mg@3AP)
have been constructed, and charge transport behavior has been observed.
Furthermore, here, it is demonstrated that the resistive random access
memory (RRAM) device based on Mg@3AP exhibits bipolar resistive switching
behavior at room temperature and ambient conditions. We have also
looked into the switching mechanism through the formation (rupture)
of conductive filaments between the metal electrodes to understand
the process of resistive switching behavior. With a high on/off ratio
(∼100), this RRAM device exhibits remarkable switching endurance
over 10,000 switching cycles. These structures are suitable for use
in nonvolatile memory design, neuromorphic computing, flexible electronics,
and optoelectronics, among other fields, due to their simple fabrication
procedures, reliable resistive switching behavior, and stability of
the current system