37 research outputs found
Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies
Full text linkThe surface and electronic structure of MOCVD-grown layers of
Ga(0.92)In(0.08)N have been investigated by means of photoemission. An
additional feature at the valence band edge, which can be ascribed to the
presence of In in the layer, has been revealed. A clean (0001)-(1x1) surface
was prepared by argon ion sputtering and annealing. Stability of chemical
composition of the investigated surface subjected to similar ion etching was
proven by means of X-ray photoemission spectroscopy.Comment: 13 pages, 6 figure
Overview of Cell‐Free Protein Synthesis: Historic Landmarks, Commercial Systems, and Expanding Applications
No full textBaixas temperaturas sobre a fluorescência da clorofila a em plantas de diferentes híbridos de canola
No full textFluorescência da clorofila a em plantas de pessegueiro da cultivar maciel enxertada sobre diferentes porta-enxertos
No full textChlorophyll a fluorescence transient analysis of transgenic potato overexpressing D-galacturonic acid reductase gene for salinity stress tolerance
No full textAlterations in leaf photosynthetic electron transport in Welsh onion ( Allium fistulosum
No full textVariable chlorophyll fluorescence and its use for assessing physiological condition of plant photosynthetic apparatus
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