Orthogonality catastrophe in a composite fermion liquid

We discuss the emergence of an orthogonality catastrophe in the response of a composite fermion liquid as the filling factor \nu approaches 1/2m, where m=1,2,3.... A tunneling experiment is proposed in which dramatic changes in the I-V characteristic should be observable as \nu is varied. Explicit I-V characteristics calculated within the so-called Modified Random Phase Approximation, are provided for \nu=1/3 -> \nu=1/2.Comment: Latex two-column 6 pages including 5 figure

Zener Tunneling Between Landau Orbits in a High-Mobility Two-Dimensional Electron Gas

Magnetotransport in a laterally confined two-dimensional electron gas (2DEG) can exhibit modified scattering channels owing to a tilted Hall potential. Transitions of electrons between Landau levels with shifted guiding centers can be accomplished through a Zener tunneling mechanism, and make a significant contribution to the magnetoresistance. A remarkable oscillation effect in weak field magnetoresistance has been observed in high-mobility 2DEGs in GaAs-AlGa$_{0.3}$As$_{0.7}$ heterostructures, and can be well explained by the Zener mechanism.Comment: 5 pages, 4 figures. Text slightly shortened, figures resize

Tilt Induced Localization and Delocalization in the Second Landau Level

We have investigated the behavior of electronic phases of the second Landau level under tilted magnetic fields. The fractional quantum Hall liquids at $\nu=$2+1/5 and 2+4/5 and the solid phases at $\nu=$2.30, 2.44, 2.57, and 2.70 are quickly destroyed with tilt. This behavior can be interpreted as a tilt driven localization of the 2+1/5 and 2+4/5 fractional quantum Hall liquids and a delocalization through melting of solid phases in the top Landau level, respectively. The evolution towards the classical Hall gas of the solid phases is suggestive of antiferromagnetic ordering

Infrared spectroscopy of Landau levels in graphene

We report infrared studies of the Landau level (LL) transitions in single layer graphene. Our specimens are density tunable and show \textit{in situ} half-integer quantum Hall plateaus. Infrared transmission is measured in magnetic fields up to B=18 T at selected LL fillings. Resonances between hole LLs and electron LLs, as well as resonances between hole and electron LLs are resolved. Their transition energies are proportional to $\sqrt{B}$ and the deduced band velocity is $\tilde{c}\approx1.1\times10^6$ m/s. The lack of precise scaling between different LL transitions indicates considerable contributions of many-particle effects to the infrared transition energies.Comment: 4 pages, 3 figures, to appear in Phys. Rev. Let

Spin Susceptibility of an Ultra-Low Density Two Dimensional Electron System

We determine the spin susceptibility in a two dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2$\times10^{9}$cm$^{-2}$ to 4$\times10^{10}$cm$^{-2}$. Our data can be fitted to an equation that describes the density dependence as well as the polarization dependence of the spin susceptibility. It can account for the anomalous g-factors reported recently in GaAs electron and hole systems. The paramagnetic spin susceptibility increases with decreasing density as expected from theoretical calculations.Comment: 5 pages, 2 eps figures, to appear in PR

Room-Temperature Quantum Hall Effect in Graphene

The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE could only have been observed at liquid-helium temperatures. Here, we show that in graphene - a single atomic layer of carbon - the QHE can reliably be measured even at room temperature, which is not only surprising and inspirational but also promises QHE resistance standards becoming available to a broader community, outside a few national institutions.Comment: Published in Science online 15 February 200

Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression

Resistance, magnetoresistance and their temperature dependencies have been investigated in the 2D hole gas at a [001] p-GaAs/Al$_{0.5}$Ga$_{0.5}$As heterointerface under [110] uniaxial compression. Analysis performed in the frame of hole-hole scattering between carriers in the two spin splitted subbands of the ground heavy hole state indicates, that h-h scattering is strongly suppressed by uniaxial compression. The decay time $\tau_{01}$ of the relative momentum reveals 4.5 times increase at a uniaxial compression of 1.3 kbar.Comment: 5 pages, 3 figures. submitted to Phys.Rev.

Quantization of the diagonal resistance: Density gradients and the empirical resistance rule in a 2D system

We have observed quantization of the diagonal resistance, R_xx, at the edges of several quantum Hall states. Each quantized R_xx value is close to the difference between the two adjacent Hall plateaus in the off-diagonal resistance, R_xy. Peaks in R_xx occur at different positions in positive and negative magnetic fields. Practically all R_xx features can be explained quantitatively by a ~1%/cm electron density gradient. Therefore, R_xx is determined by R_xy and unrelated to the diagonal resistivity rho_xx. Our findings throw an unexpected light on the empirical resistivity rule for 2D systems

Interaction-induced shift of the cyclotron resonance of graphene using infrared spectroscopy

We report a study of the cyclotron resonance (CR) transitions to and from the unusual $n=0$ Landau level (LL) in monolayer graphene. Unexpectedly, we find the CR transition energy exhibits large (up to 10%) and non-monotonic shifts as a function of the LL filling factor, with the energy being largest at half-filling of the $n=0$ level. The magnitude of these shifts, and their magnetic field dependence, suggests that an interaction-enhanced energy gap opens in the $n=0$ level at high magnetic fields. Such interaction effects normally have limited impact on the CR due to Kohn's theorem [W. Kohn, Phys. Rev. {\bf 123}, 1242 (1961)], which does not apply in graphene as a consequence of the underlying linear band structure.Comment: 4 pages, 4 figures. Version 2, edited for publication. Includes a number of edits for clarity; also added a paragraph contrasting our work w/ previous CR expts. in 2D Si and GaA

Experimental studies of the fractional quantum Hall effect in the first excited Landau level

We present a spectrum of experimental data on the fractional quantum Hall effect (FQHE) states in the first excited Landau level, obtained in an ultrahigh mobility two-dimensional electron system (2DES) and at very low temperatures and report the following results: For the even-denominator FQHE states, the sample dependence of the nu=5/2 state clearly shows that disorder plays an important role in determining the energy gap at nu=5/2. For the developing nu=19/8 FQHE state the temperature dependence of the Rxx minimum implies an energy gap of ~5mK.The energy gaps of the odd-denominator FQHE states at nu=7/3 and 8/3 also increase with decreasing disorder, similar to the gap at 5/2 state. Unexpectedly and contrary to earlier data on lower mobility samples, in this ultra-high quality specimen, the nu=13/5 state is missing, while its particle-hole conjugate state, the nu=12/5 state, is a fully developed FQHE state. We speculate that this disappearance might indicate a spin polarization of the nu=13/5 state. Finally, the temperature dependence is studied for the two-reentrant integer quantum Hall states around nu=5/2 and is found to show a very narrow temperature range for the transition from quantized to classical value.Comment: to be publishe