Single quantum dot spectroscopy using a fiber taper waveguide near-field optic

Photoluminescence spectroscopy of single InAs quantum dots at cryogenic temperatures (~14 K) is performed using a micron-scale optical fiber taper waveguide as a near-field optic. The measured collection efficiency of quantum dot spontaneous emission into the fundamental guided mode of the fiber taper is estimated at 0.1%, and spatially-resolved measurements with ~600 nm resolution are obtained by varying the taper position with respect to the sample and using the fiber taper for both the pump and collection channels.Comment: 4 pages, 3 figure

Cavity Q, mode volume, and lasing threshold in small diameter AlGaAs microdisks with embedded quantum dots

The quality factor (Q), mode volume (Veff), and room-temperature lasing threshold of microdisk cavities with embedded quantum dots (QDs) are investigated. Finite element method simulations of standing wave modes within the microdisk reveal that Veff can be as small as 2(lambda/n)^3 while maintaining radiation-limited Qs in excess of 10^5. Microdisks of diameter D=2 microns are fabricated in an AlGaAs material containing a single layer of InAs QDs with peak emission at lambda = 1317 nm. For devices with Veff ~2 (lambda/n)^3, Qs as high as 1.2 x 10^5 are measured passively in the 1.4 micron band, using an optical fiber taper waveguide. Optical pumping yields laser emission in the 1.3 micron band, with room temperature, continuous-wave thresholds as low as 1 microWatt of absorbed pump power. Out-coupling of the laser emission is also shown to be significantly enhanced through the use of optical fiber tapers, with laser differential efficiency as high as xi~16% and out-coupling efficiency in excess of 28%.Comment: 6 figure

Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells

The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diode structure with six layers of InAs QDs embedded in InGaAs quantum wells placed within a 200-nm intrinsic GaAs region. The GaAs control wafer consists of the same pin configuration but without the DWELL structure. The typical DWELL solar cell exhibits higher short current density while maintaining nearly the same open-circuit voltage for different scales, and the advantage of higher short current density is more obvious in the smaller cells. In contrast, the smaller size cells, which have a higher perimeter to area ratio, make edge recombination current dominant in the GaAs control cells, and thus their open circuit voltage and efficiency severely degrade. The open-circuit voltage and efficiency under AM1.5G of the GaAs control cell decrease from 0.914V and 8.85% to 0.834V and 7.41%, respectively, as the size shrinks from 5*5mm2 to 2*2mm2, compared to the increase from 0.665V and 7.04% to 0.675V and 8.17%, respectively, in the DWELL solar cells

Fiber-coupled, high-Q AlGaAs microdisk cavities for chip-based cavity QED

Fiber-coupled, high-quality-factor (Q > 10^5) AlGaAs microdisks with embedded InAs quantum dots are demonstrated. Microdisk lasers employing evanescent fiber coupling for optical pumping and collection of emission exhibit up to two orders of magnitude improvement in differential efficiency compared to devices probed through normal-incidence, free-space photoluminescence. The fiber taper coupling is also shown to provide an efficient optical channel for studying and manipulating the microcavity-quantum dot system, with in-fiber cavity mode collection efficiences greater than 20% and cavity loading approaching critical coupling. Progress and current challenges in incorporating such fiber-coupled devices into low temperature experiments for studying coherent interaction between single quantum dot and single cavity mode excitations will be discussed

Photoluminescence measurements of quantum-dot-containing semiconductor microdisk resonators using optical fiber taper waveguides

Fiber taper waveguides are used to improve the efficiency of room temperature photoluminescence measurements of AlGaAs microdisk resonant cavities with embedded self-assembled InAs quantum dots. As a near-field collection optic, the fiber taper improves the collection efficiency from microdisk lasers by a factor of ~ 15-100 times in comparison to conventional normal incidence free-space collection techniques. In addition, the fiber taper can serve as a efficient means for pumping these devices, and initial measurements employing fiber pumping and collection are presented. Implications of this work towards chip-based cavity quantum electrodynamics experiments are discussed.Comment: 10 pages, 7 figure

Increased normal incidence photocurrent in quantum dot infrared photodetectors

We have increased the ratio of s-polarization (normal incidence) to p-polarization photocurrent to 50% in a quantum dot-in-a-well based infrared photodetector form the typical s-p polarization ratio about 20%. This improvement was achieved by engineering the dot geometry and the quantum confinement via post growth capping materials of the Stranski Krastanov growth mode quantum dots (QDs). The TEM images show that the height to base ratio of shape engineered QDs was increased to 8 nm/12 nm from the control sample\u27s ratio 4 nm/17 nm. The dot geometry correlates with the polarized photocurrent measurements of the detector. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764905

Optical loss and lasing characteristics of high-quality-factor AlGaAs microdisk resonators with embedded quantum dots

Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs dots-in-a-well (DWELL) is performed using an optical-fiber-based probing technique at a wavelength (lambda~1400 nm) that is red-detuned from the dot emission wavelength (lambda~1200 nm). Measurements in the 1400 nm wavelength band on microdisks of diameter D = 4.5 microns show that these structures support modes with cold-cavity quality factors as high as 360,000. DWELL-containing microdisks are then studied through optical pumping at room temperature. Pulsed lasing at lambda ~ 1200 nm is seen for cavities containing a single layer of InAs dots, with threshold values of ~ 17 microWatts, approaching the estimated material transparency level. Room-temperature continuous wave operation is also observed.Comment: 4 pages, 3 figure

Laterally Coupled Quantum-Dot Distributed-Feedback Lasers

InAs quantum-dot lasers that feature distributed feedback and lateral evanescent- wave coupling have been demonstrated in operation at a wavelength of 1.3 m. These lasers are prototypes of optical-communication oscillators that are required to be capable of stable single-frequency, single-spatial-mode operation. A laser of this type (see figure) includes an active layer that comprises multiple stacks of InAs quantum dots embedded within InGaAs quantum wells. Distributed feedback is provided by gratings formed on both sides of a ridge by electron lithography and reactive-ion etching on the surfaces of an AlGaAs/GaAs waveguide. The lateral evanescent-wave coupling between the gratings and the wave propagating in the waveguide is strong enough to ensure operation at a single frequency, and the waveguide is thick enough to sustain a stable single spatial mode. In tests, the lasers were found to emit continuous-wave radiation at temperatures up to about 90 C. Side modes were found to be suppressed by more than 30 dB

High-quality-factor AlGaAs optical microcavities for atomic Cs and semiconductor quantum dot cavity QED experiments

High-quality-factor (Q~10^4-10^5) AlGaAs microdisks for atomic and semiconductor quantum dot cavity QED experiments are demonstrated. Cavities embedded with InAs/InGaAs dots-in-a-well exhibit room-temperature pulsed lasing with thresholds <17uW. Continuous wave operation at room-temperature is also observed