7,471 research outputs found
Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices
We present electrical data of silicon single electron devices fabricated with
CMOS techniques and protocols. The easily tuned devices show clean Coulomb
diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In
addition, the devices exhibit robust transistor characteristics including
uniformity within about 0.5 V in the threshold voltage, gate resistances
greater than 10 G{\Omega}, and immunity to dielectric breakdown in electric
fields as high as 4 MV/cm. These results highlight the benefits in device
performance of a fully CMOS process for single electron device fabrication.Comment: 7 pages, 7 figure
Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations
Unusual transport properties of superconducting (SC) materials, such as the
under doped cuprates, low dimensional superconductors in strong magnetic
fields, and insulating films near the Insulator Superconductor Transition
(IST), have been attributed to the formation of inhomogeneous phases.
Difficulty correlating the behaviors with observations of the inhomogeneities
make these connections uncertain. Of primary interest here are proposals that
insulating films near the IST, which show an activated resistance and giant
positive magnetoresistance, contain islands of Cooper Pairs (CPs). Here we
present evidence that these types of inhomogeneities are essential to such an
insulating phase in amorphous Bi (a-Bi) films deposited on substrates patterned
with nanometer-sized holes. The patterning induces film thickness variations,
and corresponding coupling constant variations, that transform the composition
of the insulator from localized electrons to CPs. Analyses near the
thickness-tuned ISTs of films on nine different substrates show that weak links
between SC islands dominate the transport. In particular, the ISTs all occur
when the link resistance approaches the resistance quantum for pairs. These
observations lead to a detailed picture of CPs localized by spatial variations
of the superconducting coupling constant.Comment: 4 pages, 3 figures, 1 supplemental page with 1 supplemental figur
Cooper-pair insulator phase in superconducting amorphous Bi films induced by nanometer-scale thickness variations
Ultrathin films near the quantum insulator-superconductor transition (IST) can exhibit Cooper-pair transport in their insulating state. This Cooper-pair insulator (CPI) state is achieved in amorphous Bi films evaporated onto substrates with a topography varying on lengths slightly greater than the superconducting coherence length. We present evidence that this topography induces film thickness and corresponding superconducting coupling constant variations that promote Cooper-pair island formation. Analyses of many thickness-tuned ISTs show that weak links between superconducting islands dominate the transport. In particular, the IST occurs when the link resistance approaches the resistance quantum for pairs. These results support conjectures that the CPI is an inhomogeneous state of matter
Observation of giant positive magnetoresistance in a Cooper pair insulator.
Ultrathin amorphous Bi films, patterned with a nanohoneycomb array of holes, can exhibit an insulating phase with transport dominated by the incoherent motion of Cooper pairs (CP) of electrons between localized states. Here, we show that the magnetoresistance (MR) of this Cooper pair insulator (CPI) phase is positive and grows exponentially with decreasing temperature T, for T well below the pair formation temperature. It peaks at a field estimated to be sufficient to break the pairs and then decreases monotonically into a regime in which the film resistance assumes the T dependence appropriate for weakly localized single electron transport. We discuss how these results support proposals that the large MR peaks in other unpatterned, ultrathin film systems disclose a CPI phase and provide new insight into the CP localization
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