Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices

We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 G{\Omega}, and immunity to dielectric breakdown in electric fields as high as 4 MV/cm. These results highlight the benefits in device performance of a fully CMOS process for single electron device fabrication.Comment: 7 pages, 7 figure

Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations

Unusual transport properties of superconducting (SC) materials, such as the under doped cuprates, low dimensional superconductors in strong magnetic fields, and insulating films near the Insulator Superconductor Transition (IST), have been attributed to the formation of inhomogeneous phases. Difficulty correlating the behaviors with observations of the inhomogeneities make these connections uncertain. Of primary interest here are proposals that insulating films near the IST, which show an activated resistance and giant positive magnetoresistance, contain islands of Cooper Pairs (CPs). Here we present evidence that these types of inhomogeneities are essential to such an insulating phase in amorphous Bi (a-Bi) films deposited on substrates patterned with nanometer-sized holes. The patterning induces film thickness variations, and corresponding coupling constant variations, that transform the composition of the insulator from localized electrons to CPs. Analyses near the thickness-tuned ISTs of films on nine different substrates show that weak links between SC islands dominate the transport. In particular, the ISTs all occur when the link resistance approaches the resistance quantum for pairs. These observations lead to a detailed picture of CPs localized by spatial variations of the superconducting coupling constant.Comment: 4 pages, 3 figures, 1 supplemental page with 1 supplemental figur

Cooper-pair insulator phase in superconducting amorphous Bi films induced by nanometer-scale thickness variations

Ultrathin films near the quantum insulator-superconductor transition (IST) can exhibit Cooper-pair transport in their insulating state. This Cooper-pair insulator (CPI) state is achieved in amorphous Bi films evaporated onto substrates with a topography varying on lengths slightly greater than the superconducting coherence length. We present evidence that this topography induces film thickness and corresponding superconducting coupling constant variations that promote Cooper-pair island formation. Analyses of many thickness-tuned ISTs show that weak links between superconducting islands dominate the transport. In particular, the IST occurs when the link resistance approaches the resistance quantum for pairs. These results support conjectures that the CPI is an inhomogeneous state of matter

Observation of giant positive magnetoresistance in a Cooper pair insulator.

Ultrathin amorphous Bi films, patterned with a nanohoneycomb array of holes, can exhibit an insulating phase with transport dominated by the incoherent motion of Cooper pairs (CP) of electrons between localized states. Here, we show that the magnetoresistance (MR) of this Cooper pair insulator (CPI) phase is positive and grows exponentially with decreasing temperature T, for T well below the pair formation temperature. It peaks at a field estimated to be sufficient to break the pairs and then decreases monotonically into a regime in which the film resistance assumes the T dependence appropriate for weakly localized single electron transport. We discuss how these results support proposals that the large MR peaks in other unpatterned, ultrathin film systems disclose a CPI phase and provide new insight into the CP localization