Nd:YAG laser induced E' centers probed by in situ absorption measurements

We investigated various types of commercial silica irradiated with a pulsed Nd:YAG laser radiation (4.66 eV), with exposure time ranging up to 10000 s. Transient E' centers were probed in situ by measuring the amplitude of the optical absorption band at 5.8 eV (due to E' centers) both during and after irradiation. The laser-induced absorption is observed only in natural samples, whereas the synthetic materials exhibit high toughness to radiation effect. The reported results evidence that the kinetics of E' centers is influenced by their reaction with diffusing molecular hydrogen H2 made available by dimerization of radiolytic H0.Comment: Submitted to Journal of Non Crystalline Solid

Strong light scattering and broadband (UV to IR) photoabsorption in stretchable 3D hybrid architectures based on Aerographite decorated by ZnO nanocrystallites

In present work, the nano- and microscale tetrapods from zinc oxide were integrated on the surface of Aerographite material (as backbone) in carbon-metal oxide hybrid hierarchical network via a simple and single step magnetron sputtering process. The fabricated hybrid networks are characterized for morphology, microstructural and optical properties. The cathodoluminescence investigations revealed interesting luminescence features related to carbon impurities and inherent host defects in zinc oxide. Because of the wide bandgap of zinc oxide and its intrinsic defects, the hybrid network absorbs light in the UV and visible regions, however, this broadband photoabsorption behavior extends to the infrared (IR) region due to the dependence of the optical properties of ZnO architectures upon size and shape of constituent nanostructures and their doping by carbon impurities. Such a phenomenon of broadband photoabsorption ranging from UV to IR for zinc oxide based hybrid materials is novel. Additionally, the fabricated network exhibits strong visible light scattering behavior. The developed Aerographite/nanocrystalline ZnO hybrid network materials, equipped with broadband photoabsorption and strong light scattering, are very promising candidates for optoelectronic technologies

Comparative study of image contrast in scanning electron microscope and helium ion microscope

Images of Ga(+) -implanted amorphous silicon layers in a 110 n-type silicon substrate have been collected by a range of detectors in a scanning electron microscope and a helium ion microscope. The effects of the implantation dose and imaging parameters (beam energy, dwell time, etc.) on the image contrast were investigated. We demonstrate a similar relationship for both the helium ion microscope Everhart-Thornley and scanning electron microscope Inlens detectors between the contrast of the images and the Ga(+) density and imaging parameters. These results also show that dynamic charging effects have a significant impact on the quantification of the helium ion microscope and scanning electron microscope contrast