Monte Carlo Calculations of the Extraction of Scintillation Light from Cryogenic N-type GaAs

The high scintillation luminosity of n-type GaAs at 10K is surprising because (1) with a refractive index of about 3.5, escape is inhibited by total internal reflection and (2) narrow-beam experiments at 90K report infrared absorption coefficients of several per cm. This paper presents Monte Carlo calculations showing that the high luminosity at 10K can be explained if (1) narrow-beam absorption is almost all optical scattering and (2) the absolute absorption coefficient is below 0.1 per cm. Sixteen surface reflector configurations are simulated for a range of internal scattering and absolute absorption coefficients, and these can guide the design of cryogenic scintillating GaAs targets for the direct detection of dark matter. The discussion section presents a possible infrared scattering mechanism based on the metallic nature of n-type GaAs. Appendix A describes the Monte Carlo program steps in detail. Appendix B shows how narrow-beam and integrating sphere experiments can measure the cryogenic optical scattering and absolute absorption coefficients.Comment: 12 pages, 7 tables, 2 Appendices. Submitted to Nuclear Instruments and Methods

Direct Detection of sub-GeV Dark Matter with Scintillating Targets

We describe a novel search for MeV-to-GeV-mass dark matter, in which the dark matter scatters off electrons in a scintillating target. The excitation and subsequent de-excitation of the electron produces one or more photons, which could be detected with an array of cryogenic low-noise photodetectors, such as transition edge sensors (TES) or microwave kinetic inductance devices (MKID). Scintillators may have distinct advantages over other experiments searching for a low ionization signal from sub-GeV DM. First, the detection of one or a few photons may be technologically easier. Second, since no electric field is required to detect the photons, there may be far fewer dark counts mimicking a DM signal. We discuss various target choices, but focus on calculating the expected dark matter-electron scattering rates in three scintillating crystals, sodium iodide (NaI), cesium iodide (CsI), and gallium arsenide (GaAs). Among these, GaAs has the lowest band gap (1.52 eV) compared to NaI (5.9 eV) or CsI (6.4 eV), allowing it to probe dark matter masses possibly as low as ~0.5 MeV, compared to ~1.5 MeV with NaI or CsI. We compare these scattering rates with those expected in silicon (Si) and germanium (Ge). The proposed experimental concept presents an important complementary path to existing efforts, and its potential advantages may make it the most sensitive direct-detection probe of DM down to MeV masses.Comment: 5 pages + 8 pages of supplementary materials & references, 5 figures, 3 table

Genetic Modification Strategies to Enhance CAR T Cell Persistence for Patients With Solid Tumors

Immunotherapy with chimeric antigen receptor (CAR) T cells offers a promising method to improve cure rates and decrease morbidities for patients with cancer. In this regard, CD19-specific CAR T cell therapies have achieved dramatic objective responses for a high percent of patients with CD19-positive leukemia or lymphoma. Most patients with solid tumors however, have experienced transient or no benefit from CAR T cell therapies. Novel strategies are therefore needed to improve CAR T cell function for patients with solid tumors. One obstacle for the field is limited CAR T cell persistence after infusion into patients. In this review we highlight genetic engineering strategies to improve CAR T cell persistence for enhancing antitumor activity for patients with solid tumors

Evaluation of production samples of the scintillators LaBr3:Ce and LaCl3:Ce

We report on the evaluation of the performance of two recently developed scintillator materials, LaCl{sub 3}:Ce and LaBr{sub 3}:Ce, at the task of gamma ray spectroscopy. Their performance is compared to a standard scintillator used for gamma ray spectroscopy--a 25 mm diameter 25 mm tall cylinder of NaI:Tl. We measure the pulse height, energy resolution, and full-energy efficiency of production LaBr{sub 3}:Ce and LaCl{sub 3}:Ce scintillation crystals of different sizes and geometries for a variety of gamma-ray energies. Using production rather than specially selected crystals will establish whether immediate large-scale use is feasible. The crystal is excited by gamma rays from one of six isotopic sources ({sup 125}I, {sup 241}Am, {sup 57}Co, {sup 22}Na, {sup 137}Cs, and {sup 60}Co) placed 15 cm away from the scintillator. Our measurements show that both LaCl{sub 3} and LaBr{sub 3} outperform NaI:Tl in almost all cases. They outperform NaI:Tl at all energies for the photopeak fraction and counting rate measurements, and for energy resolution at higher energies (above 200 keV for LaCl{sub 3} and 75 keV for LaBr{sub 3}). The performance of production crystals is excellent and these scintillators should be considered for immediate use in systems where stopping power and energy resolution are crucial

Scintillation of tantalate compounds

A screening of 63 metal-tantalate-oxides was conducted in search of heavy scintillator materials operating at ambient temperature. While tantalates are known to have slow scintillation decay times, the high atomic number of tantalum (73) provides good stopping power for gamma rays. Screened samples were synthesized by solid state reactions. Scintillation properties of these materials were evaluated by X-ray diffraction, X-ray excited luminescence and pulsed X-ray luminescence. Of the 63 synthesized tantalates examined only 12 had luminosity values greater than 1000 ph/MeV at room temperature. From these, ScTaO4, YTa3O9, and Zn3Ta2O8 have greater than 40% of their emission in the first μs. The brightest and fastest compound of those tested was Zn3Ta2O8 with an estimated luminosity of 26,000 ph/MeV and a main decay time of 600 ns from its crystalline powder. Further attention is given to Zn3Ta2O8 and Mg4Ta2O9 scintillation properties, demonstrating their potential for scintillation applications

ELECTRON AVALANCHE IN LIQUID XENON

We present detailed measurements of the electron avalanche process in liquid Xenon. The measurements were made by using liquid-Xe-filled proportional chambers with anode diameters of 2.9, 3.5, and 5.0 {approx} to detect 279-keV y rays and measure the photopeak pulse height as a function of applied voltage. The use of uniform pulses of electrons enabled us to discriminate against secondary Townsend processes. We present a table of the first Townsend coefficient a as a function of electric field E; a typical value is {alpha} = (4.5 {+-} 0.3) x 10{sup 4} cm{sup -1} at E = 2 x 10{sup 6} V/cm. The electron avalanche occurs in liquid Xe at electric fields 26 times smaller than would be predicted using measurements made in gaseous Xe and E/{rho} density scaling