155 research outputs found
Secondary electron emission yield in the limit of low electron energy
Secondary electron emission (SEE) from solids plays an important role in many
areas of science and technology.1 In recent years, there has been renewed
interest in the experimental and theoretical studies of SEE. A recent study
proposed that the reflectivity of very low energy electrons from solid surface
approaches unity in the limit of zero electron energy2,3,4, If this was indeed
the case, this effect would have profound implications on the formation of
electron clouds in particle accelerators,2-4 plasma measurements with
electrostatic Langmuir probes, and operation of Hall plasma thrusters for
spacecraft propulsion5,6. It appears that, the proposed high electron
reflectivity at low electron energies contradicts to numerous previous
experimental studies of the secondary electron emission7. The goal of this note
is to discuss possible causes of these contradictions.Comment: 3 pages, contribution to the Joint INFN-CERN-EuCARD-AccNet Workshop
on Electron-Cloud Effects: ECLOUD'12; 5-9 Jun 2012, La Biodola, Isola d'Elba,
Ital
N-transfer through aspen litter and feather moss layers after fertilization with ammonium nitrate and urea
When fertilizer is broadcast in boreal forest stands, the applied nutrients must pass through a thick layer of either feather moss or leaf litter which covers the forest floor. In a growth chamber experiment we tested the transfer of N through living feather moss or aspen litter when fertilized with urea ((NH2)2CO) or NH4NO3 at a rate of 100 kg ha−1 and under different watering regimes. When these organic substrates were frequently watered to excess they allowed the highest transfer of nutrients through, although 72% of the applied fertilizer was captured in the substrates. In a field experiment we also fertilized moss and aspen litter with urea ((NH2)2CO) or NH4NO3 at a more operationally relevant rate of 330 kg ha−1. We captured the NO3− or NH4+ by ion exchange resin at the substrate–mineral soil interface. In contrast to the growth chamber experiment, this fertilizer rate killed the moss and there was no detectable increase in nutrient levels in the aspen litter or feather moss layers. Instead, the urea was more likely transferred into the mineral soil; mineral soil of the urea treatment had 1.6 times as much extractable N compared to the NH4NO3 treatment. This difference between the growth chamber and field studies was attributed to observed fertilizer- damage to the living moss and possibly damage to the litter microflora due to the higher rate of fertilization in the field. In addition, the early and substantial rainfall after fertilization in the field experiment produced conditions for rapid leaching of N through the organic layers into the mineral soil. In the field, only 8% of the urea-N that was applied was captured by the ion exchange resin, while 34% was captured in for the NH4NO3 fertilization. Thus, the conditions for rapid leaching in the field moved much of the N in the form of urea through the organic layers and into the mineral soil before it was hydrolyzed
About of organization of student science and research works
На примере научной группы профессора Б. В. Шульгина, работающего на кафедре экспериментальной физики, показаны результаты организации НИРС и ВНР студентов в рамках инновационного подхода, осуществляемого путем подключения их к разработке новых объектов интеллектуальной собственности, отвечающих требованиям мировой новизны. В результате такого подхода за последние 40 лет 48 студентов из научной группы профессора Б. В. Шульгина стали соавторами 64 изобретений.The results of student science work organization (including organization of diploma work) on the invention level (creation of new objects of intellectual properties) on the example of science group of professor В. V. Shulgin (experimental physics department) in the frame of innovation way are presented. As a result вгкштп дфые 40 years 48 students from the science group of professor В. V. Shulgin were became co-authors of 64 inventions
Proton polarizability and the Lamb shift in muonic hydrogen
The proton structure and proton polarizability corrections to the Lamb shift
of electronic hydrogen and muonic hydrogen were evaluated on the basis of
modern experimental data on deep inelastic structure functions. Numerical value
of proton polarizability contribution to (2P-2S) Lamb shift is equal to 4.4
GHz.Comment: 8 pages, LaTeX2.09, 2 figures, uses linedraw.st
Dislocation of the penis: a rare case of genital trauma
Traumatic dislocation of the penis is one of the rarest types of genital trauma. This type of injury is accompanied by a violation of the integrity of the skin and the penile ligamentous apparatus, with the dislocation of the penis into the scrotum under the skin of the thigh, or the area of the pubic joint. The low occurrence frequency of such injuries and the small number of observations described in the literature entails the absence of generally accepted treatment tactics for this category of patients. The article describes a clinical case of successfully treated traumatic dislocation of the penis with penile transposition into the pubic joint area and the formation of subcutaneous urinary leakage after late treatment of the patient for medical care
Comparison of quantum mechanical and classical trajectory calculations of cross sections for ion-atom impact ionization of negative - and positive -ions for heavy ion fusion applications
Stripping cross sections in nitrogen have been calculated using the classical
trajectory approximation and the Born approximation of quantum mechanics for
the outer shell electrons of 3.2GeV I and Cs ions. A large
difference in cross section, up to a factor of six, calculated in quantum
mechanics and classical mechanics, has been obtained. Because at such high
velocities the Born approximation is well validated, the classical trajectory
approach fails to correctly predict the stripping cross sections at high
energies for electron orbitals with low ionization potential.Comment: submitted to Phys. Rev.
Scaling and Formulary cross sections for ion-atom impact ionization
The values of ion-atom ionization cross sections are frequently needed for
many applications that utilize the propagation of fast ions through matter.
When experimental data and theoretical calculations are not available,
approximate formulas are frequently used. This paper briefly summarizes the
most important theoretical results and approaches to cross section calculations
in order to place the discussion in historical perspective and offer a concise
introduction to the topic. Based on experimental data and theoretical
predictions, a new fit for ionization cross sections is proposed. The range of
validity and accuracy of several frequently used approximations (classical
trajectory, the Born approximation, and so forth) are discussed using, as
examples, the ionization cross sections of hydrogen and helium atoms by various
fully stripped ions.Comment: 46 pages, 8 figure
Фотонные и терагерцовые применения как следующий драйвер рынка арсенида галлия
Analysis of current GaAs and related device market initiated in a number of earlier works has been continued. Binary semiconductor GaAs compound is a conventional MW electronics material. Until recently GaAs based HF ICs for mobile phones were among the most rapidly growing segments of GaAs market. However the GaAs market development trend is changing. Photonics and TeraHertz engineering are becoming the new world GaAs market drivers. This means that the current emphasize of GaAs single crystal technologies will shift toward vertical directional crystallization of “optoelectronic quality” crystals. In the medium and longer terms the world GaAs wafer and epitaxial structure markets will continue growing. In the shorter term we all will have to take into account COVID epidemic consequences. Still the GaAs market is closely related to Smartphone market novelties. Quite probably after a long growth period the GaAs market will keep on shrinking for the second consecutive year: GaAs production may decline by 11–12 % in 2020. Assuming that the epidemic will be somehow taken under control in 2021 the overall Smartphone production can probably be expected to grow starting from 2021.Currently the Russian market of semiconductor compounds for photonics and electronic components (GaAs etc.) is but moderate and in predictable terms is not expected to achieve a level that is required for the emergence of a competitive domestic manufacturer, even though all importation replacement programs are accomplished. Meanwhile there is understanding that developing an advanced electronic components industry in Russia requires larger production of source materials.Продолжен предпринятый ранее в ряде работ анализ современного состояния рынка GaAs и приборов на его основе. Двойное полупроводниковое соединение арсенид галлия (GaAs) — традиционный материал СВЧ-электроники. До недавних пор одним из наиболее быстрорастущих сегментов рынка применений этого материала были высокочастотные интегральные схемы на GaAs для мобильной телефонии. Однако, парадигма развития рынка GaAs меняется. Новым двигателем развития мирового рынка арсенида галлия становится фотоника и терагерцовая техника. Это означает, что в технологиях выращивания монокристаллов GaAs произойдет смена акцентов в сторону кристаллов «оптоэлектронного качества», получаемых методом вертикальной направленной кристаллизации. В средне- и долгосрочной перспективе мировые рынки пластин и эпитаксиальных структур GaAs будут расти. В ближайшей перспективе необходимо учитывать последствия пандемии COVID. Пока рынок GaAs тесно связано с разработками на рынке смартфонов. Очень вероятно, что после длительного периода роста рынок GaAs будет второй год подряд сокращаться — производство GaAs в 2020 году может снизиться на 11—12 %. Если предположить, что пандемия будет как-то взята под контроль в 2021 году, общее производство смартфонов вероятно, вырастет начиная с 2021 г.На данный момент российский рынок полупроводниковых соединений для развития фотоники и электронно-компонентной базы (GaAs и др.) имеет незначительный объем и в ближайшей перспективе не достигнет уровня, необходимого для появления конкурентоспособного отечественного производителя, даже при условии выполнения программ импортозамещения. В то же время, существует понимание, что для создания современной электронной компонентной базы в России необходимо развивать производства исходных материалов
Comment on “Generation of Electromagnetic Pulses from Plasma Channels Induced by Femtosecond Light Strings”
Proton polarizability effect in the Lamb shift of the hydrogen atom
The proton polarizability correction to the Lamb shift of electronic and
muonic hydrogen is calculated on the basis of isobar model and experimental
data on the structure functions of deep inelastic lepton-nucleon scattering.
The contributions of the Born terms, vector-meson exchanges and nucleon
resonances are taken into account in the construction of the photoabsorption
cross sections for transversely and longitudinally polarized virtual photons
sigma_{T,L}.Comment: 11 pages, 3 figure
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