International Emission Permits: Equity and Efficiency

Not all possible distributions of a given total of emission permits are compatible with the attainment of first-best Pareto efficiency. In fact, of the infinitely many ways of distributing a given total of permits between a fixed number of parties, only a finite number can lead to efficiency. We can therefore evaluate permit allocations not only in terms of their equity, but also in terms of their efficiency. If there are no other redistributive instruments in the policy environment, the traditional orthogonality of equity and efficiency does not hold here. This has important implications for arguments about the initial international distribution of entitlements to produce carbon dioxide

State accountability ratings as related to district size and diversity.

All Texas school districts were examined to determine the relationship of district size and diversity to the accountability ratings of selected Texas school districts and the implications of including all data in the accountability rating system. Eight large districts and 12 small districts were matched demographically utilizing data from the 2003-2004 school year. Information from the Texas Education Agency was accessed over 2003-2004 and 2004-2005. The ratings were found to be lowered from Recognized to Academically Acceptable with the inclusion of these groups 6 out of 20 times. These findings indicate that the Texas accountability system, in its current structure, excludes certain students based upon race and economic status and is not in compliance with what the law intended. This study should be replicated on a larger scale to assess its validity for a larger sample of small districts. Equity among states should be examined to provide information for a nationwide accountability system

Observing sub-microsecond telegraph noise with the radio frequency single electron transistor

Telegraph noise, which originates from the switching of charge between meta-stable trapping sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to decoherence and loss of read out fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semiconductor-based quantum computer architecture. We frequently observe micro-second telegraph noise, which is a strong function of the local electrostatic potential defined by surface gate biases. We present a method for studying telegraph noise using the rf-SET and show results for a charge trap in which the capture and emission of a single electron is controlled by the bias applied to a surface gate.Comment: Accepted for publication in Journal of Applied Physics. Comments always welcome, email [email protected], [email protected]

Development and operation of the twin radio frequency single electron transistor for solid state qubit readout

Ultra-sensitive detectors and readout devices based on the radio frequency single electron transistor (rf-SET) combine near quantum-limited sensitivity with fast operation. Here we describe a twin rf-SET detector that uses two superconducting rf-SETs to perform fast, real-time cross-correlated measurements in order to distinguish sub-electron signals from charge noise on microsecond time-scales. The twin rf-SET makes use of two tuned resonance circuits to simultaneously and independently address both rf-SETs using wavelength division multiplexing (WDM) and a single cryogenic amplifier. We focus on the operation of the twin rf-SET as a charge detector and evaluate the cross-talk between the two resonance circuits. Real time suppression of charge noise is demonstrated by cross correlating the signals from the two rf-SETs. For the case of simultaneous operation, the rf-SETs had charge sensitivities of $\delta q_{SET1} = 7.5 \mu e/\sqrt{Hz}$ and $\delta q_{SET2} = 4.4 \mu e/\sqrt{Hz}$.Comment: Updated version, including new content. Comments most welcome: [email protected] or [email protected]

Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots

We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the metal-insulator transition, separated from each other and the source and drain reservoirs by nominally undoped (intrinsic) silicon tunnel barriers. Metallic control gates, together with an Al-AlOx single-electron transistor, were positioned on the substrate surface, capacitively coupled to the buried dots. The individual double-dot charge states were probed using source-drain bias spectroscopy combined with non-invasive SET charge sensing. The system was measured in linear (VSD = 0) and non-linear (VSD 0) regimes allowing calculations of the relevant capacitances. Simultaneous detection using both SET sensing and source-drain current measurements was demonstrated, providing a valuable combination for the analysis of the system. Evolution of the triple points with applied bias was observed using both charge and current sensing. Coulomb diamonds, showing the interplay between the Coulomb charging effects of the two dots, were measured using simultaneous detection and compared with numerical simulations.Comment: 7 pages, 6 figure