35 research outputs found

    Π£ΡΠΎΠ²Π΅Ρ€ΡˆΠ΅Π½ΡΡ‚Π²ΠΎΠ²Π°Π½Π½Ρ‹ΠΉ ΠΌΠ΅Ρ‚ΠΎΠ΄ получСния Π³Π΅ΠΏΡ‚ΠΈΠ»ΠΎΠ²ΠΎΠ³ΠΎ эфира 4-Ρ‚Ρ€ΠΈΡ„Ρ‚ΠΎΡ€Π°Ρ†Π΅Ρ‚ΠΈΠ»Π±Π΅Π½Π·ΠΎΠΉΠ½ΠΎΠΉ кислоты

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    A convenient three-step method for synthesis of heptyl (4-trifluoroacetyl)benzoate, an important neutral anionΒ carrier, has been developed. The key step of the method is acylation of toluene by trifluoroacetic anhydride in presence of aluminium chloride at –8 – –10 oC. The procedure gives high overall yield and, unlike the earlier methods, does not include any organometallic reagents, therefore allowing scaling it up to several hundred grams, that makes the target compound much more readily available.Π£ΡΠΎΠ²Π΅Ρ€ΡˆΠ΅Π½ΡΡ‚Π²ΠΎΠ²Π°Π½Π½Ρ‹ΠΉ ΠΌΠ΅Ρ‚ΠΎΠ΄ получСния Π³Π΅ΠΏΡ‚ΠΈΠ»ΠΎΠ²ΠΎΠ³ΠΎ эфира 4-Ρ‚Ρ€ΠΈΡ„Ρ‚ΠΎΡ€Π°Ρ†Π΅Ρ‚ΠΈΠ»Π±Π΅Π½Π·ΠΎΠΉΠ½ΠΎΠΉ кислоты Π Π°Π·Ρ€Π°Π±ΠΎΡ‚Π°Π½ ΡƒΠ΄ΠΎΠ±Π½Ρ‹ΠΉ Ρ‚Ρ€eхстадийный ΠΌΠ΅Ρ‚ΠΎΠ΄ синтСза Π³Π΅ΠΏΡ‚ΠΈΠ»ΠΎΠ²ΠΎΠ³ΠΎ эфира 4-Ρ‚Ρ€ΠΈΡ„Ρ‚ΠΎΡ€Π°Ρ†Π΅Ρ‚ΠΈΠ»Π±Π΅Π½Π·ΠΎΠΉΠ½ΠΎΠΉ кислоты, ΡˆΠΈΡ€ΠΎΠΊΠΎ ΠΏΡ€ΠΈΠΌΠ΅Π½ΡΡŽΡ‰Π΅Π³ΠΎΡΡ Π² потСнциомСтричСском Π°Π½Π°Π»ΠΈΠ·Π΅ Π² качСствС Π½Π΅ΠΉΡ‚Ρ€Π°Π»ΡŒΠ½ΠΎΠ³ΠΎ пСрСносчика Π°Π½ΠΈΠΎΠ½ΠΎΠ². ΠšΠ»ΡŽΡ‡Π΅Π²ΠΎΠΉ стадиСй ΠΌΠ΅Ρ‚ΠΎΠ΄Π° являСтся Π°Ρ†ΠΈΠ»ΠΈΡ€ΠΎΠ²Π°Π½ΠΈΠ΅ Ρ‚ΠΎΠ»ΡƒΠΎΠ»Π° трифторуксусным Π°Π½Π³ΠΈΠ΄Ρ€ΠΈΠ΄ΠΎΠΌ Π² присутствии Ρ…Π»ΠΎΡ€ΠΈΠ΄Π° алюминия ΠΏΡ€ΠΈ –8 – –10 oC. Данная ΠΏΡ€ΠΎΡ†Π΅Π΄ΡƒΡ€Π° позволяСт ΠΏΠΎΠ»ΡƒΡ‡ΠΈΡ‚ΡŒ высокий ΠΎΠ±Ρ‰ΠΈΠΉ Π²Ρ‹Ρ…ΠΎΠ΄ ΠΏΡ€ΠΎΠ΄ΡƒΠΊΡ‚Π° ΠΈ, Π² ΠΎΡ‚Π»ΠΈΡ‡ΠΈΠ΅ ΠΎΡ‚ описанных Π² Π»ΠΈΡ‚Π΅Ρ€Π°Ρ‚ΡƒΡ€Π΅ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΈΠΊ, Π½Π΅ Ρ‚Ρ€Π΅Π±ΡƒΠ΅Ρ‚ использования мСталлоорганичСских Ρ€Π΅Π°Π³Π΅Π½Ρ‚ΠΎΠ², Ρ‡Ρ‚ΠΎ позволяСт ΡƒΠ²Π΅Π»ΠΈΡ‡ΠΈΡ‚ΡŒ ΠΌΠ°ΡΡˆΡ‚Π°Π± синтСза Π΄ΠΎ сотСн Π³Ρ€Π°ΠΌΠΌΠΎΠ² ΠΈ ΡΠ΄Π΅Π»Π°Ρ‚ΡŒ Ρ†Π΅Π»Π΅Π²ΠΎΠΉ ΠΏΡ€ΠΎΠ΄ΡƒΠΊΡ‚ Π·Π½Π°Ρ‡ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎ Π±ΠΎΠ»Π΅Π΅ доступным

    ВлияниС засСлСния Ρ‚Ρ€ΠΈΠΏΠ»Π΅Ρ‚Π½ΠΎΠ³ΠΎ состояния Π’1 Π½Π° ΠΊΠΈΠ½Π΅Ρ‚ΠΈΠΊΡƒ поляризации флуорСсцСнции органичСских Ρ„Π»ΡƒΠΎΡ€ΠΎΡ„ΠΎΡ€ΠΎΠ²

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    ΠšΠΈΠ½Π΅Ρ‚ΠΈΠΊΠ° поляризации флуорСсцСнции органичСских Ρ„Π»ΡƒΠΎΡ€Π΅ΡΡ†ΠΈΡ€ΡƒΡŽΡ‰ΠΈΡ… ΠΌΠΎΠ»Π΅ΠΊΡƒΠ», Π° Ρ‚Π°ΠΊΠΆΠ΅ ΠΌΠΎΠ»Π΅ΠΊΡƒΠ», ΠΈΠΌΠ΅ΡŽΡ‰ΠΈΡ… пСрСходящиС Π΄Ρ€ΡƒΠ³ Π² Π΄Ρ€ΡƒΠ³Π° ΠΏΠΎΠ΄ дСйствиСм свСта Π΄Π²Π΅ ΠΈΠ·ΠΎΠΌΠ΅Ρ€Π½Ρ‹Π΅ Ρ„ΠΎΡ€ΠΌΡ‹, молСкулярныС остовы ΠΊΠΎΡ‚ΠΎΡ€Ρ‹Ρ… Π½Π΅ΠΏΠΎΠ΄Π²ΠΈΠΆΠ½Ρ‹, исслСдована числСнными ΠΌΠ΅Ρ‚ΠΎΠ΄Π°ΠΌΠΈ, основанными Π½Π° Ρ€Π΅ΡˆΠ΅Π½ΠΈΠΈ систСм балансных ΡƒΡ€Π°Π²Π½Π΅Π½ΠΈΠΉ для насСлСнностСй энСргСтичСских ΡƒΡ€ΠΎΠ²Π½Π΅ΠΉ. Для ΠΌΠΎΠ΄Π΅Π»ΡŒΠ½Ρ‹Ρ… ΠΎΠ±ΡŠΠ΅ΠΊΡ‚ΠΎΠ² ΠΈΠ·ΡƒΡ‡Π΅Π½ΠΎ Π΄Π΅ΠΏΠΎΠ»ΡΡ€ΠΈΠ·ΡƒΡŽΡ‰Π΅Π΅ влияниС Π½ΠΈΠΆΠ½Π΅Π³ΠΎ Ρ‚Ρ€ΠΈΠΏΠ»Π΅Ρ‚Π½ΠΎΠ³ΠΎ состояния T1 ΠΈ прСдставлСны Π²Ρ€Π΅ΠΌΠ΅Π½Π½Ρ‹Π΅ зависимости поляризации ΠΏΡ€ΠΈ квазипостоянном ΠΈ ΠΈΠΌΠΏΡƒΠ»ΡŒΡΠ½ΠΎΠΌ Ρ„ΠΎΡ‚ΠΎΠ²ΠΎΠ·Π±ΡƒΠΆΠ΄Π΅Π½ΠΈΠΈ. The fluorescence polarization kinetics of organic fluorescent molecules and molecules having two photoisomeric forms with the fixed molecular skeletons was investigated by numerical methods based on the solution of population balance equation systems. For model compounds the depolarizing effect of the lowest triplet state T1 was studied and the time dependence of the polarization at quasi-continuous-wave and pulsed photoexcitation was presented

    Growing Cu2S Thin Films by Exposing a Copper Substrate to Gas-Phase Products of Brown Coal Hydrothermal Desulfurization

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    Thin films of copper(I) sulfide (Cu2S) are synthesized on a copper substrate by exposing it to vapor-phase sulfur-containing products resulting from the hydrothermal desulfurization of brown coal. The synthesized 0.1-mm-thick films have grain sizes in the range of 10β€’20 ΞΌm, electrical resistivity ρ = 0.92 Ξ© cm at T = 300 K, and bang gap Eg = 1.91 eV. The roughness of the films, in terms of the arithmetic mean deviation of the assessed profile, is Ra = 2.46 ΞΌm. Β© 2018, Pleiades Publishing, Ltd

    Growing Cu2S Thin Films by Exposing a Copper Substrate to Gas-Phase Products of Brown Coal Hydrothermal Desulfurization

    No full text
    Thin films of copper(I) sulfide (Cu2S) are synthesized on a copper substrate by exposing it to vapor-phase sulfur-containing products resulting from the hydrothermal desulfurization of brown coal. The synthesized 0.1-mm-thick films have grain sizes in the range of 10β€’20 ΞΌm, electrical resistivity ρ = 0.92 Ξ© cm at T = 300 K, and bang gap Eg = 1.91 eV. The roughness of the films, in terms of the arithmetic mean deviation of the assessed profile, is Ra = 2.46 ΞΌm. Β© 2018, Pleiades Publishing, Ltd
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