Asymmetry of a complex gap near the Fermi level, determined from measurements of the thermopower in La₁₋xCaxMn₁₋yFeyO₃

The experimental data are analysed quantitatively with a percolation model using results of our recent investigations of the Shklovskii–Efros-like variable-range hopping conductivity in the same set of La₁₋xCaxMn₁₋yFeyO₃ samples with evidence for a soft Coulomb gap and a rigid gap in the density of states near the Fermi levelyesBelgorod State Universit

Disorder in (Zn₁₋ₓMnₓ)₃As₂ and its consequences on impurity conduction and magnetic properties

Special attention is paid to the remanent disorder at temperatures much below the order-disorder phase hansition temperature Tph. Dependences of Tph and the activation energy of hopping conductivity on composition are analysedyesBelgorod State Universit

Critical behavior of magnetoresistance near the metal-insulator transition of La₀₇Ca₀₃MnO₃

The resistivity, ρ(T), of thin film and bulk samples of La₀₇Ca₀₃MnO₃ is investigated in magnetic fields between 0-10 T and temperatures between 10-340 K. Metallic resistivity, ρlt(T)=ρr+ρ2T2+ρ4.5T4.5, is observed well below the metal–insulator transition (MIT) temperature TMI. For T>TMI, the resistivity is governed by the Shklovskii-Efros variable-range hopping mechanism, giving View the MathML sourceyesBelgorod State Universit

Variable-range hopping conductivity in La₁₋ₓCaₓMnO₃

The temperature dependence of the local activation energy, Eloc (T ) = d ln ρ(T )/d(kT )⁻¹ gives evidence for a variable-range hopping conductivity over states of the Coulomb gapyesBelgorod State Universit

Vacancy-type disorder in (Zn₁₋xMnx)₃As₂

yesDisorder in stacking of vacant cites in the crystal structure of the diluted magnetic semiconducting alloy (Zn₁₋xMnx)₃As₂ is studied. Compositional dependencies of the order-disorder transition temperature, and the activation energy of hopping conductivity are analyzed, paying attention to atoms in the sites which are vacant in a completely ordered stateBelgorod State Universit

Variable-range hopping conductivity in La₁₋ₓCaₓMnO₃

yesThe temperature dependence of the local activation energy, Eloc (T ) = d ln ρ(T )/d(kT )⁻¹ gives evidence for a variable-range hopping conductivity over states of the Coulomb gapBelgorod State Universit

Critical behavior of magnetoresistance near the metal-insulator transition of La₀₇Ca₀₃MnO₃

yesThe resistivity, ρ(T), of thin film and bulk samples of La₀₇Ca₀₃MnO₃ is investigated in magnetic fields between 0-10 T and temperatures between 10-340 K. Metallic resistivity, ρlt(T)=ρr+ρ2T2+ρ4.5T4.5, is observed well below the metal–insulator transition (MIT) temperature TMI. For T>TMI, the resistivity is governed by the Shklovskii-Efros variable-range hopping mechanism, giving View the MathML sourceBelgorod State Universit

Disorder in (Zn₁₋ₓMnₓ)₃As₂ and its consequences on impurity conduction and magnetic properties

yesSpecial attention is paid to the remanent disorder at temperatures much below the order-disorder phase hansition temperature Tph. Dependences of Tph and the activation energy of hopping conductivity on composition are analysedBelgorod State Universit

Asymmetry of a complex gap near the Fermi level, determined from measurements of the thermopower in La₁₋xCaxMn₁₋yFeyO₃

yesThe experimental data are analysed quantitatively with a percolation model using results of our recent investigations of the Shklovskii–Efros-like variable-range hopping conductivity in the same set of La₁₋xCaxMn₁₋yFeyO₃ samples with evidence for a soft Coulomb gap and a rigid gap in the density of states near the Fermi levelBelgorod State Universit