Effets induits par le bombardement ionique en cours de croissance sur les proprietes structurales de couches minces metalliques et dielectriques

SIGLEINIST T 75842 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

Role of the external NH2 linker on the conformation of surface immobilized single strand DNA probes and their SERS detection

International audienc

Chemical stability of Si-SiC nanostructures under physiological conditions

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Optimizing interferences of DUV lithography on SOI substrates for the rapid fabrication of sub-wavelength features

International audienceScalable fabrication of Si nanowires with a critical dimension of about 100 nm is essential to a variety of applications. Current techniques used to reach these dimensions often involve e-beam lithography or deep-UV (DUV) lithography combined with resolution enhancement techniques. In this study, we report the fabrication of <150 nm Si nanowires from SOI substrates using DUV lithography (λ=248 nm) by adjusting the exposure dose. Irregular resist profiles generated by in-plane interference under masking patterns of width 800 nm were optimized to split the resulting features into twin Si nanowires. However, masking patterns of micrometre size or more on the same photomask does not generate split features. The resulting resist profiles are verified by optical lithography computer simulation based on Huygens−Fresnel diffraction theory. Photolithography simulation results validate that the key factors in the fabrication of subwavelength nanostructures are the air gap value and the photoresist thickness. This enables the parallel top-down fabrication of Si nanowires and nanoribbons in a single DUV lithography step as a rapid and inexpensive alternative to conventional e-beam techniques

Fabrication of an Open Gate-4H-SiC Junction Field Effect Transistor for Bio-Related and Chemical Sensing Applications

In this paper, a suitable process technology is employed to fabricate a new open gate silicon carbide-based junction field-effect transistor (OG-4H-SiC-JFET) intended to be used for all types of biochemical sensing applications. The main focus is dedicated to the fabrication steps and specifically the plasma etching of the SiC as it is the key step to pattern the device components. All necessary I-V characteristics (I DS -V DS and I DS -V GS ) have been derived and show acceptable electrical performance. Furthermore, the electrical characteristics of the OG-4H-SiC JFET were simulated using 3D Silvaco ATLAS and are in line with the experimental electrical characteristics. The efficacity and simplicity of the process described in this paper is the first step for future development of biochemical sensors based on SiC-FETs

Optimizing PECVD a-SiC:H Films for Neural Interface Passivation

This work aims to optimize Plasma-Enhanced Chemical Vapour Deposition (PECVD) amorphous hydrogenated silicon carbide (a-SiC:H) as a conformal passivation layer for invasive microelectrode array (MEA) neural interface applications. By carefully tuning the PECVD deposition parameters, the composition, structure, electrical, and mechanical properties of the films can be optimized for high resistivity, low stress, and great resistance to chemical attack. This optimization will eventually allow a-SiC:H to be used as an ideal insulation, passivation and protection layer for thin and biocompatible all-SiC neural interfaces

Preparation and characterization of antimony-doped SnO2 thin films on gold and silver substrates for electrochemical and surface plasmon resonance studies

The paper reports on the deposition of thin antimony (Sb)-doped SnO2 films onto gold and silver substrates using magnetron sputtering. The influence of the SnO2:Sb film on the electrochemical and surface plasmon resonance properties is investigated. The best results in terms of stability, electrochemical and plasmonic characteristics are obtained for SnO2:Sb of 8.5 nm thickness deposited on silver substrates. (c) 2008 Elsevier B.V. All rights reserved

Wafer-scale fabrication of biologically sensitive Si nanowire FET: from pH sensing to electrical detection of DNA hybridization

International audienc

Progress in SiC nanowire field-effect-transistors for integrated circuits and sensing applications

International audienc

Investigating the long-term stability of Si and SiC nanowires under physiological conditions

session poster (p27)National audienc