1 research outputs found
GdN Nanoisland-Based GaN Tunnel Junctions
Tunnel junctions could have a great
impact on gallium nitride and
aluminum nitride-based devices such as light-emitting diodes and lasers
by overcoming critical challenges related to hole injection and p-contacts.
This paper demonstrates the use of GdN nanoislands to enhance interband
tunneling and hole injection into GaN p–n junctions by several
orders of magnitude, resulting in low tunnel junction specific resistivity
(1.3 × 10<sup>–3</sup> Ω-cm<sup>2</sup>) compared
to the previous results in wide band gap semiconductors. Tunnel injection
of holes was confirmed by low-temperature operation of GaN p–n
junction with a tunneling contact layer, and strong electroluminescence
down to 20 K. The low tunnel junction resistance combined with low
optical absorption loss in GdN is very promising for incorporation
in GaN-based light emitters