Localized vibrational modes of lithium and lithium-defect pairs in silicon Final report, 1 Jul. 1967 - 30 Sep. 1968

Localized vibrational modes of lithium and lithium-defect pairs in silico

Left-Handed Surface Waves in a Photonic Structure

It is demonstrated that an isotropic left-handed medium can be constructed as a photonic structure consisting of two dielectric materials, one with positive and another with negative dielectric permittivities epsilon. Electromagnetic waves supported by this structure are the surface waves localized at the dielectric interfaces. These surface waves can be either surface phonons or surface plasmons. Two examples of negative epsilon materials are used: silicon carbide and free-electron gas.Comment: 7 pages, two figure

Localized vibration modes of defect pairs in silicon

Absorption bands and localized vibrational modes of silicon doped with boron compounds containing phosphorus, arsenic, antimony, or lithiu

Distribution of sizes of erased loops for loop-erased random walks

We study the distribution of sizes of erased loops for loop-erased random walks on regular and fractal lattices. We show that for arbitrary graphs the probability $P(l)$ of generating a loop of perimeter $l$ is expressible in terms of the probability $P_{st}(l)$ of forming a loop of perimeter $l$ when a bond is added to a random spanning tree on the same graph by the simple relation $P(l)=P_{st}(l)/l$. On $d$-dimensional hypercubical lattices, $P(l)$ varies as $l^{-\sigma}$ for large $l$, where $\sigma=1+2/z$ for $1<d<4$, where z is the fractal dimension of the loop-erased walks on the graph. On recursively constructed fractals with $\tilde{d} < 2$ this relation is modified to $\sigma=1+2\bar{d}/{(\tilde{d}z)}$, where $\bar{d}$ is the hausdorff and $\tilde{d}$ is the spectral dimension of the fractal.Comment: 4 pages, RevTex, 3 figure

Evidence Of Dark Matter Annihilations In The WMAP Haze

The WMAP experiment has revealed an excess of microwave emission from the region around the center of our Galaxy. It has been suggested that this signal, known as the ``WMAP Haze'', could be synchrotron emission from relativistic electrons and positrons generated in dark matter annihilations. In this letter, we revisit this possibility. We find that the angular distribution of the WMAP Haze matches the prediction for dark matter annihilations with a cusped density profile, $\rho(r) \propto r^{-1.2}$ in the inner kiloparsecs. Comparing the intensity in different WMAP frequency bands, we find that a wide range of possible WIMP annihilation modes are consistent with the spectrum of the haze for a WIMP with a mass in the 100 GeV to multi-TeV range. Most interestingly, we find that to generate the observed intensity of the haze, the dark matter annihilation cross section is required to be approximately equal to the value needed for a thermal relic, $\sigma v \sim 3 \times 10^{-26}$ cm$^3$/s. No boost factors are required. If dark matter annihilations are in fact responsible for the WMAP Haze, and the slope of the halo profile continues into the inner Galaxy, GLAST is expected to detect gamma rays from the dark matter annihilations in the Galactic Center if the WIMP mass is less than several hundred GeV.Comment: 4 pages, 3 figure

Fermi Level Position at Semiconductor Surfaces

There have been several recent reports of barrier height studies on metal-semiconductor interfaces. Metals of widely different work functions evaporated onto Si and GaAs surfaces indicated that in each case the energy difference between the semiconductor conduction band edge and Fermi level at the interface,φ_(Bn), was essentially independent of the metal, which indicates that the Fermi level is fixed by surface states. In the present work barrier height measurements have been made on a number of zinc-blende semiconductors to determine (a) if the barriers are in all cases determined by surface states, and (b) the relation between the Fermi energy at the interface and the band gap E_g

Photoemission from Au and Cu into CdS

Many metal-semiconductor surface barrier rectifiers show photosensitivity for photon energies (hv) less than the semiconductor energy gap (E_g). Cases in the literature include metals evaporated or electrodeposited on elemental and III-V compound semiconductor surfaces. In these studies the source of the low-energy photocurrent, when hv < E_g, was shown to be the photoemission of carriers over the Schottky barrier between the metal film and the semiconductor. An extensive investigation has been reported for a series of metals, particularly Cu and Au, electroplated on n-type CdS with the conclusion that here also photoemission from the metal is responsible for most of the low-energy photovoltage. However, recent studies have questioned this conclusion for the CdS case. One study proposed that the origin of the low-energy photovoltaic response is electron photoexcitation from Cu impurities located in the CdS and within a diffusion length of the space charge region. Hole conduction probably in the 3d Cu levels was postulated for these samples, which had ≈ 30-ppm Cu. A second study interpreted the results as a p·n junction photovoltaic effect

Conduction Band Minima of Ga(As_(1−x)P_x)

Photoresponse of surface barriers on samples of Ga(As_(1−x_P_x) covering the range 0≤x≤1 has been measured. Thresholds corresponding to both direct and indirect band-to-band excitations within the semiconductor and also photoinjection from the metal have been identified. The threshold of the direct transition varies with composition from 1.37 eV in GaAs to 2.65 eV in GaP. The indirect transition was followed for x≳0.38 and again varied linearly from 2.2 eV in GaP to an extrapolated value in 1.62 eV in GaAs. The energy separation of the two conduction band minima in GaAs is in disagreement with previously reported values