94 research outputs found

    Relative luminosity measurement of the LHC with the ATLAS forward calorimeter

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    In this paper it is shown that a measurement of the relative luminosity changes at the LHC may be obtained by analysing the currents drawn from the high voltage power supplies of the electromagnetic section of the forward calorimeter of the ATLAS detector. The method was verified with a reproduction of a small section of the ATLAS forward calorimeter using proton beams of known beam energies and variable intensities at the U-70 accelerator at IHEP in Protvino, Russia. The experimental setup and the data taking during a test beam run in April 2008 are described in detail. A comparison of the measured high voltage currents with reference measurements from beam intensity monitors shows a linear dependence on the beam intensity. The non-linearities are measured to be less than 0.5 % combining statistical and systematic uncertainties.Comment: 16 page

    Construction, assembly and testing of the ATLAS hadronic end-cap calorimeter

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    The construction and assembly of the four wheels of the ATLAS hadronic end-cap calorimeter and their insertion into the two end-cap cryostats are described. The results of the qualification tests prior to installation of the two cryostats in the ATLAS experimental cavern are reviewed

    ATLAS detector and physics performance: Technical Design Report, 1

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    Simulation of impact ionization process in deep submicron n-channel MOSFETS

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    The ensemble Monte Carlo simulation of deep submicron silicon MOSFET with length is performed. The effective threshold energy of impact ionization process in the MOSFET is calculated in the framework of Keldysh mode

    Über den Abbau des Hirngewebes in der Cerebrospinalflüssigkeit

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    Der Erregbarkeitszustand der Nervenzelle und das Lyssabild

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    The Monte Carlo semiconductor device structures simulation approach using the object-oriented programming technology

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    Рассмотрены некоторые аспекты разработки программного комплекса моделирования процессов переноса носителей заряда в интегральных полупроводниковых структурах методом Монте-Карло. Основное внимание уделено построению эффективной объектной иерархии, которая дает возможность повторного использования написанного ранее кода, а также минимизирует проблемы, возникающие при разработке программного комплекса несколькими программистами. В качестве иллюстрации работоспособности описанного комплекса приведены результаты расчета вольт-амперной характеристики (ВАХ) интегрального n-канального МОП-транзистора и проведено их сравнение с известными экспериментальными данными
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