Cellular effects of terahertz waves

Significance: An increasing interest in the area of biological effects at exposure of tissues and cells to the terahertz (THz) radiation is driven by a rapid progress in THz biophotonics, observed during the past decades. Despite the attractiveness of THz technology for medical diagnosis and therapy, there is still quite limited knowledge about safe limits of THz exposure. Different modes of THz exposure of tissues and cells, including continuous-wave versus pulsed radiation, various powers, and number and duration of exposure cycles, ought to be systematically studied. Aim: We provide an overview of recent research results in the area of biological effects at exposure of tissues and cells to THz waves. Approach: We start with a brief overview of general features of the THz-wave–tissue interactions, as well as modern THz emitters, with an emphasis on those that are reliable for studying the biological effects of THz waves. Then, we consider three levels of biological system organization, at which the exposure effects are considered: (i) solutions of biological molecules;(ii) cultures of cells, individual cells, and cell structures; and (iii) entire organs or organisms; special attention is devoted to the cellular level. We distinguish thermal and nonthermal mechanisms of THz-wave–cell interactions and discuss a problem of adequate estimation of the THz biological effects’ specificity. The problem of experimental data reproducibility, caused by rareness of the THz experimental setups and an absence of unitary protocols, is also considered. Results: The summarized data demonstrate the current stage of the research activity and knowledge about the THz exposure on living objects. Conclusions: This review helps the biomedical optics community to summarize up-to-date knowledge in the area of cell exposure to THz radiation, and paves the ways for the development of THz safety standards and THz therapeutic applications

Quantitative super-resolution solid immersion microscopy via refractive index profile reconstruction

Solid Immersion (SI) microscopy is a modern imaging modality that overcomes the Abbe diffraction limit and offers novel applications in various branches of visible, infrared, terahertz, and millimeter-wave optics. Despite the widespread use, SI microscopy usually results in qualitative imaging. Indeed, it presents only the raw distributions (in the image plane) of the backscattered field intensity, while unlocking the information about the physical properties of an imaged object, such as its complex refractive index (RI) distribution, requires resolving the inverse problem and remains a daunting task. In this paper, a method for resolving the SI microscopy inverse problem is developed, capable of reconstructing the RI distribution at the object imaging plane with subwavelength spatial resolution, while performing only intensity measurements. The sample RI is retrieved via minimization of the error function that characterizes discrepancy between the experimental data and the predictions of analytical model. This model incorporates all the key features of the electromagnetic-wave interaction with the SI lens and an imaged object, including contributions of the evanescent and ordinary-reflected waves, as well as effects of light polarization and wide beam aperture. The model is verified numerically, using the finite-element frequency-domain method, and experimentally, using the in-house reflection-mode continuous-wave terahertz SI microscope. Spatial distributions of the terahertz RIs of different low-absorbing optical materials and highly absorbing biological objects were studied and compared to a priori known data to demonstrate the potential of the novel SI microscopy modality. Given the linear nature of the Maxwell’s equations, the developed method can be applied for subwavelength-resolution SI microscopy at other spectral ranges

Special section guest editorial: advances in terahertz and infrared optoelectronics

This special section presents recent results in the field of infrared (IR) and terahertz (THz) optoelectronics, which have been developing rapidly over the past decades. The progress of IR and THz technologies affects a variety of fundamental problems in material science, astrophysics, chemistry and biology, medical diagnosis, and high-resolution and multispectral imaging modalities