20 research outputs found
INJECTION LUMINESCENCE IN AMORPHOUS SILICON p+-i-n+ JUNCTIONS
We present a detailed study of electroluminescence (EL) spectra and EL quantum efficiency in well characterised a-Si p+-i-n+ junctions under forward bias. The PL characteristics of the i region were probed using laser excitation. Some factors controlling EL efficiency are discussed. EL and PL recombination models are compared and discussed