24 research outputs found
Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content
10.1109/VTSA.2008.4530829International Symposium on VLSI Technology, Systems, and Applications, Proceedings126-12
Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content
10.1109/TED.2008.928025IEEE Transactions on Electron Devices5592475-2483IETD