19 research outputs found
Spin-orbit-driven band inversion in bilayer graphene by the van der Waals proximity effect.
Spin-orbit coupling (SOC) is the key to realizing time-reversal-invariant topological phases of matter1,2. SOC was predicted by Kane and Mele3 to stabilize a quantum spin Hall insulator; however, the weak intrinsic SOC in monolayer graphene4-7 has precluded experimental observation in this material. Here we exploit a layer-selective proximity effect-achieved via a van der Waals contact with a semiconducting transition-metal dichalcogenide8-21-to engineer Kane-Mele SOC in ultra clean bilayer graphene. Using high-resolution capacitance measurements to probe the bulk electronic compressibility, we find that SOC leads to the formation of a distinct, incompressible, gapped phase at charge neutrality. The experimental data agree quantitatively with a simple theoretical model in which the new phase results from SOC-driven band inversion. In contrast to Kane-Mele SOC in monolayer graphene, the inverted phase is not expected to be a time-reversal-invariant topological insulator, despite being separated from conventional band insulators by electric-field-tuned phase transitions where crystal symmetry mandates that the bulk gap must close22. Our electrical transport measurements reveal that the inverted phase has a conductivity of approximately e2/h (where e is the electron charge and h Planck's constant), which is suppressed by exceptionally small in-plane magnetic fields. The high conductivity and anomalous magnetoresistance are consistent with theoretical models that predict helical edge states within the inverted phase that are protected from backscattering by an emergent spin symmetry that remains robust even for large Rashba SOC. Our results pave the way for proximity engineering of strong topological insulators as well as correlated quantum phases in the strong spin-orbit regime in graphene heterostructures
One-dimensional Topological Edge States of Bismuth Bilayers
The hallmark of a time-reversal symmetry protected topologically insulating
state of matter in two-dimensions (2D) is the existence of chiral edge modes
propagating along the perimeter of the system. To date, evidence for such
electronic modes has come from experiments on semiconducting heterostructures
in the topological phase which showed approximately quantized values of the
overall conductance as well as edge-dominated current flow. However, there have
not been any spectroscopic measurements to demonstrate the one-dimensional (1D)
nature of the edge modes. Among the first systems predicted to be a 2D
topological insulator are bilayers of bismuth (Bi) and there have been recent
experimental indications of possible topological boundary states at their
edges. However, the experiments on such bilayers suffered from irregular
structure of their edges or the coupling of the edge states to substrate's bulk
states. Here we report scanning tunneling microscopy (STM) experiments which
show that a subset of the predicted Bi-bilayers' edge states are decoupled from
states of Bi substrate and provide direct spectroscopic evidence of their 1D
nature. Moreover, by visualizing the quantum interference of edge mode
quasi-particles in confined geometries, we demonstrate their remarkable
coherent propagation along the edge with scattering properties that are
consistent with strong suppression of backscattering as predicted for the
propagating topological edge states.Comment: 15 pages, 5 figures, and supplementary materia
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Spin-orbit-driven band inversion in bilayer graphene by the van der Waals proximity effect.
Spin-orbit coupling (SOC) is the key to realizing time-reversal-invariant topological phases of matter1,2. SOC was predicted by Kane and Mele3 to stabilize a quantum spin Hall insulator; however, the weak intrinsic SOC in monolayer graphene4-7 has precluded experimental observation in this material. Here we exploit a layer-selective proximity effect-achieved via a van der Waals contact with a semiconducting transition-metal dichalcogenide8-21-to engineer Kane-Mele SOC in ultra clean bilayer graphene. Using high-resolution capacitance measurements to probe the bulk electronic compressibility, we find that SOC leads to the formation of a distinct, incompressible, gapped phase at charge neutrality. The experimental data agree quantitatively with a simple theoretical model in which the new phase results from SOC-driven band inversion. In contrast to Kane-Mele SOC in monolayer graphene, the inverted phase is not expected to be a time-reversal-invariant topological insulator, despite being separated from conventional band insulators by electric-field-tuned phase transitions where crystal symmetry mandates that the bulk gap must close22. Our electrical transport measurements reveal that the inverted phase has a conductivity of approximately e2/h (where e is the electron charge and h Planck's constant), which is suppressed by exceptionally small in-plane magnetic fields. The high conductivity and anomalous magnetoresistance are consistent with theoretical models that predict helical edge states within the inverted phase that are protected from backscattering by an emergent spin symmetry that remains robust even for large Rashba SOC. Our results pave the way for proximity engineering of strong topological insulators as well as correlated quantum phases in the strong spin-orbit regime in graphene heterostructures
Spin–orbit-driven band inversion in bilayer graphene by the van der Waals proximity effect
© 2019, The Author(s), under exclusive licence to Springer Nature Limited. Spin–orbit coupling (SOC) is the key to realizing time-reversal-invariant topological phases of matter1,2. SOC was predicted by Kane and Mele3 to stabilize a quantum spin Hall insulator; however, the weak intrinsic SOC in monolayer graphene4–7 has precluded experimental observation in this material. Here we exploit a layer-selective proximity effect—achieved via a van der Waals contact with a semiconducting transition-metal dichalcogenide8–21—to engineer Kane–Mele SOC in ultra clean bilayer graphene. Using high-resolution capacitance measurements to probe the bulk electronic compressibility, we find that SOC leads to the formation of a distinct, incompressible, gapped phase at charge neutrality. The experimental data agree quantitatively with a simple theoretical model in which the new phase results from SOC-driven band inversion. In contrast to Kane–Mele SOC in monolayer graphene, the inverted phase is not expected to be a time-reversal-invariant topological insulator, despite being separated from conventional band insulators by electric-field-tuned phase transitions where crystal symmetry mandates that the bulk gap must close22. Our electrical transport measurements reveal that the inverted phase has a conductivity of approximately e2/h (where e is the electron charge and h Planck’s constant), which is suppressed by exceptionally small in-plane magnetic fields. The high conductivity and anomalous magnetoresistance are consistent with theoretical models that predict helical edge states within the inverted phase that are protected from backscattering by an emergent spin symmetry that remains robust even for large Rashba SOC. Our results pave the way for proximity engineering of strong topological insulators as well as correlated quantum phases in the strong spin–orbit regime in graphene heterostructures