1 research outputs found
Layer-by-Layer Oxidation Induced Electronic Properties in Transition-Metal Dichalcogenides
Recent
progress in transition-metal dichalcogenides has opened
up new possibilities for atomically thin nanomaterial based electronic
device applications. Here we investigate atomic-scale self-assembled
heterojunction modulated by layer-by-layer controlled oxidation in
monolayer and few-layer dichalcogenide systems and their electronic
properties within a first-principles framework. Pristine dichalcogenide
systems exhibit semiconducting behavior. We observe reduction of the
band gap for partial oxidation of the top layer. However, complete
oxidation of the top layer makes the system metallic, owing to the
charge transfer from the pristine to the oxidized layer, as observed
in recent experiments. When the bottom layer gets partially oxidized
with fully oxidized top layers, the system shows unprecedented semimetallic
behavior. The appearance of valence band maximum and conduction band
minimum at different k-points can introduce valley polarization. Therefore,
our study shows controlled oxidation induced varying electronic properties
in dichalcogenide based heterojunctions that can be exploited for
advanced electronic, optoelectronic, and valleytronic device applications