A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications

This paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol-nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>l0^5 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications

Role of native traps on the tunneling characteristics of ultra-thin (1.5-3 nm) oxides

The native traps are investigated which a have a significant role in the tunneling characteristics of thin oxide (1.5-3 nm) MOS devices. The number of traps and their role on the tunneling current can be minimized by careful and simple processing. Results showed that the traps affect the tunneling current in relatively thick oxides while their role vanishes at oxide thicknesses of 2 nm and below