27 research outputs found

    Broad emission lines from opaque electron-scattering environment of SN 1998S

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    I propose that broad narrow-topped emission lines with full width at zero intensity >20000 km/s, seen in early-time spectra of SN 1998S, originate from a dense circumstellar gas and not from the supernova ejecta. The tremendous line width is the result of multiple scattering of the narrow line radiation on thermal electrons of the circumstellar shell with the Thomson optical depth of about 4 on 1998 March 6.Comment: 7 pages, 4 figures, accepted for publication in MNRA

    Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands

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    International audienceA report is presented on the investigation of the influence of in situ annealing of the InGaAs layer in p-n InGaAs/GaAs structures grown by the metalloorganic chemical vapor deposition upon the formation of coherently strained three-dimensional islands. The structures were studied by the methods of capacitance-voltage measurements, deep-level transient spectroscopy, transmission electron microscopy, and photoluminescence. It is established that three-dimensional islands with misfit dislocations are formed in the unannealed structure A, while quantum dots are formed in the annealed structure B. The deep-level defects were investigated. In structure A, defects of various types (EL2, EL3 (I3), I2, HL3, HS2, and H5) are present in the electron-accumulation layer. Concentrations of these traps are comparable to the shallow donor concentration, and the number of hole traps is higher than that of the electron traps. On the in situ annealing, the EL2 and EL3 defects, which are related to the formation of dislocations, disappear, and concentrations of the other defects decrease by an order of magnitude or more. For structure A, it is established that the population of the quantum states in the islands is controlled by the deep-level defects. In structure B, the effect of the Coulomb interaction of the charge carriers localized in the quantum dot with the ionized defects is observed
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