Correlation between Crystallographic Alignment of Self-induced GaN Nanowires and Features of Si(111) Nitridation

Formation and spatial ordering of self-induced GaN nanowires grown by molecular beam epitaxy on a spatially pre-nitridazed Si(111) substrate have been studied. It was found the close correlation between Si substrate nitridation parameters and crystallographic alignment of NWs. Conditions for NWs nucleation and in- plane orientation are predefined by a structural anisotropy of silicon nitride nanolayer. Mechanism of NWs orderly emergence suggested. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3540