Zone Leveling Crystal Growth of Thermoelectric PbTe Alloys with Sb_(2)Te_3 Widmanstätten Precipitates

Unidirectional solidification of PbTe-rich alloys in the pseudobinary PbTe-Sb_(2)Te_3 system using the zone leveling technique enables the production of large regions of homogeneous solid solutions for the formation of precipitate nanocomposites as compared with Bridgman solidification. (PbTe)_(0.940)(Sb_(2)Te_3)_(0.060) and (PbTe)_(0.952)(Sb_(2)Te_3)_(0.048) alloys were successfully grown using (PbTe)_(0.4)(Sb_(2)Te_3)_(0.6) and (PbTe)_(0.461)(Sb_(2)Te_3)_(0.539) as seed alloys, respectively, with 1 mm h^(–1) withdrawal velocity. In the unidirectionally solidified regions of both alloys, Widmanstatten precipitates are formed due to the decrease in solubility of Sb_(2)Te_3 in PbTe. To determine the compositions of the seed alloys for the zone leveling experiments, the solute distribution in solidification in the PbTe-richer part of the pseudobinary PbTe-Sb_(2)Te_3 system has been examined from the concentration profiles in the samples unidirectionally solidified by the Bridgman method

Reduction of lattice thermal conductivity from planar faults in the layered Zintl compound SrZnSb_2

The layered Zintl compound SrZnSb_2 is investigated using transmission electron microscopy (TEM) to understand the low lattice thermal conductivity. The material displays out-of-phase boundaries with a spacing from 100 down to 2 nm. Density functional theory calculations confirm that the TEM-derived defect structure is energetically reasonable. The impact of these defects on phonon scattering is analyzed within the Debye–Callaway model, which reveals a significant reduction in the acoustic phonon mean free path. This enhancement in phonon scattering leads to an ~30% reduction in lattice thermal conductivity at 300 K

Effect of disorder on the thermal transport and elastic properties in thermoelectric Zn4Sb3

Zn4Sb3 undergoes a phase transition from alpha to beta phase at T1[approximate]250 K. The high temperature beta-Zn4Sb3 phase has been widely investigated as a potential state-of-the-art thermoelectric (TE) material, due to its remarkably low thermal conductivity. We have performed electronic and thermal transport measurements exploring the structural phase transition at 250 K. The alpha to beta phase transition manifests itself by anomalies in the resistivity, thermopower, and specific heat at 250 K as well as by a reduction in the thermal conductivity as Zn4Sb3 changes phase from the ordered alpha to the disordered beta-phase. Moreover, measurements of the elastic constants using resonant ultrasound spectroscopy (RUS) reveal a dramatic softening at the order-disorder transition upon warming. These measurements provide further evidence that the remarkable thermoelectric properties of beta-Zn4Sb3 are tied to the disorder in the crystal structure

CAN-HK : An a priori crustal model for the Canadian Shield

ACKNOWLEDGMENTS The United Kingdom component of the Hudson Bay Lithospheric Experiment (HuBLE) was supported by the Natural Environment Research Council (NERC) Grant Number NE/F007337/1, with financial and logistical support from the Geological Survey of Canada (GSC), Canada-Nunavut Geoscience Office (CNGO), SEIS-UK (the seismic node of NERC), and the First Nations communities of Nunavut. J. Beauchesne and J. Kendall provided invaluable assistance in the field. I. D. B. was funded by the Leverhulme Trust and acknowledges support through Grant Number RPG-2013- 332. The authors thank three anonymous reviewers for their constructive comments.Peer reviewedPublisher PD

High-frequency performance of Schottky source/drain silicon pMOS devices

A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic small-signal equivalent circuit. It is demonstrated that the current drive and the gate transconductance strongly depend on the silicidation anneal temperature, whereas the unity-gain cutoff frequency of the measured devices remains nearly unchanged