Fermi-dirac and random carrier distributions in quantum dot lasers

Using experimental gain and emission measurements as functions of temperature, a method is described to characterise the carrier distribution of radiative states in a quantum dot (QD) laser structure in terms of a temperature. This method is independent of the form of the inhomogeneous dot distribution. A thermal distribution at the lattice temperature is found between 200 and 300K. Below 200K the characteristic temperature exceeds the lattice temperature and the distribution becomes random below about 60 K. This enables the temperature range for which Fermi-Dirac statistics are applicable in QD laser threshold calculations to be identified. (C) 2014 AIP Publishing LLC

Comparison of experimental and theoretical gain-current relations in GaInP quantum well lasers

The authors compare the results of a microscopic laser theory with gain and recombination currents obtained from experimental spontaneous emission spectra. The calculated absorption spectrum is first matched to that measured on a laser, ensuring that the quasi-Fermi levels for the calculation and the experiment (spontaneous emission and gain) are directly related. This allows one to determine the inhomogeneous broadening in their experimental samples. The only other inputs to the theory are literature values of the bulk material parameter. The authors then estimate the non-radiative recombination current associated with the well and wave-guide core from a comparison of measured and calculated recombination currents

Photonic integration platform with pump free microfluidics

Chip based particle sensing using 3D capillary fill microfluidics integrated with monolithically integrated lasers and photodetectors is used to demonstrate the feasibility of true chip scale photonic measurements of fluids. The approach is scalable and manufactured using industry standard compound semiconductor fabrication tools. The need for fluid speed regulation via external pumps is removed by measuring local particle velocity at the point of interrogation and particle position within the fluid flow is derived from multiple time resolved forward scattered light signals. Particle size discrimination of 10 and 15 μm polystyrene microbeads is used as an example

Femtosecond pulse generation in passively mode locked InAs quantum dot lasers

Optical pulse durations of an InAs two-section passively mode-locked quantum dot laser with a proton bombarded absorber section reduce from 8.4 ps at 250K to 290 fs at 20 K, a factor of 29, with a corresponding increase in optical bandwidth. Rate equation analysis of gain and emission spectra using rate equations suggests this is due to the very low emission rate of carriers to the wetting layer in the low temperature, random population regime which enables dots across the whole inhomogeneous distribution to act as independent oscillators. (C) 2013 AIP Publishing LLC

Long wavelength quantum-dot lasers selectively populated using tunnel injection

Using measured amplified spontaneous emission data, we have derived and analysed the carrier distribution of a five-layer tunnelling injection quantum-dot structure at temperatures of 300 K and 350 K. The results are consistent with the direct injection of electrons from the injector well into a subset of lower energy dot states. The carrier distribution spectra contain features which suggest that dots of a particular size within the ensemble are preferentially populated leading to a reduced spectral broadening of the emission.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/58108/2/sst7_5_018.pd

Degradation studies of InAs/GaAs QD lasers grown on Si

Lowering the threshold gain of InAs quantum dot lasers grown on Silicon, significantly extends device lifetime. Measurements on degraded devices show increased optical mode loss is responsible for degradation and a consequent shortening of lasing wavelength

Dual-wavelength InP quantum dot lasers

We have demonstrated a two-section dual-wavelength diode laser incorporating distributed Bragg reflectors, with a peak-wavelength separation of 62.5 nm at 300 K. Each lasing wavelength has a different temperature dependence, providing a difference-tuning of 0.11 nm/K. We discuss the mechanisms governing the light output of the two competing modes and explain how the short wavelength can be relatively insensitive to output changes at the longer wavelength. Starting from an initial condition when the output at both wavelengths are equal, a 500% increase in the long wavelength output causes the short wavelength output to fall by only 6%

InP quantum dot mode-locked lasers and materials studies

InP/GaInP quantum dot laser structures exhibiting broad optical gain spectra suitable for mode-locking have been demonstrated. Two-section narrow ridge passive mode-locked lasers were fabricated from this material. Mode-locking conditions have been investigated for devices with different cavity lengths, with maximum frequency of 15.21 GHz

Polarization dependence study of electroluminescence and absorption from InAs / GaAs columnar quantum dots

Semiconductor optical amplifiers based on InGaAs columnar quantum dots (CQDs) with different numbers of superlattice periods were fabricated and tested. The polarization dependence of the electroluminescence(EL) and absorption of such CQDs structures were measured. Compared to standard QDs a large improvement in the ratio of transverse-magnetic (TM) and -electric (TE) integrated EL was obtained in CQDs, depending on the number of stacked GaAs / InAs superlattice periods, which can be attributed to the more symmetric shape of CQDs. TM and TE resolved photovoltage absorption spectroscopy confirmed this improvement. A small spectral separation between TE- and TM-EL peaks has been observed showing that heavy and light holelike states are energetically close in these QDs