Evolution of the electronic structure across the filling-control and bandwidth-control metal-insulator transitions in pyrochlore-type Ru oxides

We have performed photoemission and soft x-ray absorption studies of pyrochlore-type Ru oxides, namely, the filling-control system Sm$_{2-x}$Ca$_x$Ru$_2$O$_7$ and the bandwidth-control system Sm$_{2-x}$Bi$_x$Ru$_2$O$_7$, which show insulator-to-metal transition with increasing Ca and Bi concentration, respectively. Core levels and the O 2$p$ valence band in Sm$_{2-x}$Ca$_x$Ru$_2$O$_7$ show almost the same amount of monotonous upward energy shifts with Ca concentration, which indicates that the chemical potential is shifted downward due to hole doping. The Ru 4$d$ band in Sm$_{2-x}$Ca$_x$Ru$_2$O$_7$ is also shifted toward the Fermi level ($E_F$) with hole doping and the density of states (DOS) at $E_F$ increases. The core levels in Sm$_{2-x}$Bi$_x$Ru$_2$O$_7$, on the other hand, do not show clear energy shifts except for the Ru 3$d$ core level, whose line shape change also reflects the increase of metallic screening with Bi concentration. We observe pronounced spectral weight transfer from the incoherent to the coherent parts of the Ru 4d $t_{2g}$ band with Bi concentration, which is expected for a bandwidth-control Mott-Hubbard system. The increase of the DOS at $E_F$ is more abrupt in the bandwidth-control Sm$_{2-x}$Bi$_x$Ru$_2$O$_7$ than in the filling-control Sm$_{2-x}$Ca$_x$Ru$_2$O$_7$, in accordance with a recent theoretical prediction. Effects of charge transfer between the Bi 6$sp$ band and the Ru 4$d$ band are also discussed.Comment: 11 pages, 6 figure

Low Mass Standard Model Higgs Limit at the Tevatron

The searches for the Standard Model (SM) Higgs Boson at the Fermilab Tevatron by the CDF and D{\O} experiments are presented. Their state of the art techniques, including maximizing Higgs signal acceptance, reducing background through b-jet ID, and with Multi-Variate discrimination between signal and background, are elucidated. The two experiments are able to achieve a sensitivity of three to five times SM cross section ({\sigma}SM) at the benchmark mass point of mH=115 GeV/c2 using the main search channels WH->lvbb, ZH->vvbb, and ZH->llbb, and on combining all the channels from CDF and D{\O}, the observed (expected) limit is 1.56 (1.45) x {\sigma}SM. The present expected limit is 1.8 x {\sigma}SM or below for the entire low mass range, and sensitivity projections at present anticipate in Tevatron Run II a 3{\sigma} sensitivity achievement for mH=115 GeV/c2.Comment: HCP2010 Conference Contributio

Direct evidence of soft mode behavior near the Burns' temperature in PbMg1/3_{1 / 3}Nb2/3_{2 / 3}O3_{3} (PMN) relaxor ferroectric

Inelastic neutron scattering measurements of the relaxor ferroelectric PbMg$_{1 / 3}$Nb$_{2 / 3}$O$_{3}$ (PMN) in the temperature range 490~K$<$T$<$880~K directly observe the soft mode (SM) associated with the Curie-Weiss behavior of the dielectric constant $\varepsilon$(T). The results are treated within the framework of the coupled SM and transverse optic (TO1) mode and the temperature dependence of the SM frequency at q=0.075 a* is determined. The parameters of the SM are consistent with the earlier estimates and the frequency exhibits a minimum near the Burns temperature ($\approx$ 650K)Comment: 6 figure

A Selective and Sensitive Chromogenic and Fluorogenic Detection of a Sulfur Mustard Simulant

A simple and highly selective chromogenic and fluorogenic detection of sulfur mustard (SM) simulants is reported. Dithiol 1, in the presence and absence of a mustard simulant behaves differently toward a squaraine dye (SQ), and thus provides a visual and spectroscopic signal for mustard gas. The sensor responds to the SM simulant, but not to the O-analog of mustard stimulant or nerve agent mimics and other electrophilic agents. The visual and fluorescent detection with less than 50 mu M of SM simulant shows good sensitivity. The utility of the sensor was demonstrated by analysis of SM simulant on surfaces, in soil, and in the gas phase.Office of Naval Research N00014-09-1-1087Welch Foundation F-1151Department of Science and Technology, IndiaDefense Research and Development Organization, IndiaChemistr