Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors

Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor for the unannealed sample and the sample after rapid thermal annealing it has been shown that variation of the contact resistance on the plate is related with that of semiconductor and may be caused by inhomogeneity of the dopant distribution

Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics

We present the results of investigation of the barrier height and ideality factor in Schottky barrier diodes based on Au–TiB₂–n-SiC 6H relying on measuring the current-voltage and capacitance-voltage characteristics. Improving the accuracy of the methods that take into account the effect of the series resistance in calculating the ideality factor and barrier height has been shown with the Cheung method and direct approximation one. It has been ascertained that an inconsistency between real currentvoltage characteristics and its model – the temperature dependence of the barrier height, the ideality factor dependence on the voltage – introduces the basic error into the calculated parameters in the diode under study

Hybrid-integrated version of SBD amplitude detector intended for the 400–600 GHz frequency range

A finline version of detector with flat Schottky barrier diodes is developed. It is intended for operation in the 400600 GHz frequency range. The detector electrical parameters are studied. The detector conversion ratio at a frequency of 420 GHz is 97 V/W

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes

The method of electrophysical diagnostic of n⁺-n-n⁺ structures at the etching stage of manufacturing process of power IMPATT diodes has been proposed. A numerical method for specific contacts resistance calculation of vertical ohmic contacts with a non-uniform doping level has been developed. Vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si both before and after etching were used for experimental checking this model. It has been computed the value of contact resistance in the interface metal–n⁺ with correction of contribution of n⁺-n and n-n⁺ resistances to the total resistance. The values of total effective resistances of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si may be calculated using the Cox–Strack method. We used solutions of Laplace’s equation for computation of specific contact resistance metal–n⁺ without contribution of interfaces n⁺-n and n-n⁺. The values of specific contact resistance were ~10⁻⁶ Ohm·cm². This method allows to control the manufacture process by monitoring the changes in electrophysical properties of the structure between etching cycles

Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP

Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared using the method of successive thermal evaporation of metals in oil-free vacuum in one process cycle onto the n⁺-n-n⁺⁺-n⁺⁺⁺-InP epitaxial structure heated to 300 °C. It has been theoretically and experimentally shown that within the temperature range 250…380 K the current transport mechanism in the ohmic contacts Au–Ti–Pd–n⁺-InP is thermal-field one, and in the ohmic contacts Au–Ti–Ge–Pd-n⁺-InP it is caused by conductivity along metal shunts linked with dislocations. According to the X-ray diffraction data, the density of these dislocations in the near-contact InP area is ~10⁹ cm⁻²

Ohmic contacts based on Pd to indium phosphide Gunn diodes

Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact resistance measured at room temperature was about 7·10⁻⁵ Ohm·cm². Voltage-current characteristics within the temperature range 110 to 380 K are linear. Gunn diodes with such contacts, which were made as a straight mesa-structure in a pulsed mode (pulse duration of 100 ns, pulse ratio of 1000, operating current of 2.2 A), generated the microwave power ~10 mW in the V-band