Model for the coherent optical manipulation of a single spin state in a charged quantum dot

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Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems. In this paper, we review the analytical and the numerical simulation techniques used to study and predict such intrinsic parameters fluctuations. We consider random discrete dopants, trapped charges, atomic-scale interface roughness, and line edge roughness as sources of intrinsic parameter fluctuations. The presented theoretical approach based on Green's functions is restricted to the case of random discrete charges. The numerical simulation approaches based on the drift diffusion approximation with density gradient quantum corrections covers all of the listed sources of fluctuations. The results show that the intrinsic fluctuations in conventional MOSFETs, and later in double gate architectures, will reach levels that will affect the yield and the functionality of the next generation analog and digital circuits unless appropriate changes to the design are made. The future challenges that have to be addressed in order to improve the accuracy and the predictive power of the intrinsic fluctuation simulations are also discussed

Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study

In this paper, we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub-100 mn MOSFETs. The simulations have been performed using a three-dimensional (3-D) implementation of the density gradient (DG) formalism incorporated in our established 3-D atomistic simulation approach. This results in a self-consistent 3-D quantum mechanical picture, which implies not only the vertical inversion layer quantization but also the lateral confinement effects related to current filamentation in the “valleys” of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical dopant fluctuations, is an increase in both threshold voltage fluctuations and lowering. At the same time, the random dopant induced threshold voltage lowering partially compensates for the quantum mechanical threshold voltage shift in aggressively scaled MOSFETs with ultrathin gate oxides

Quantum Corrections to the ‘Atomistic’ MOSFET Simulations

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Quantum Mechanical Enhancement of Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 micron MOSFETs

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Ebonex-Supported PtM Anode Catalysts for PEM Water Electrolysis

The work presents a research on the preparation of Pt-based bimetallic catalysts dispersed on commercial Magnelli phase titania (Ebonex@) by sol gel method and investigation of their activity toward the oxygen evolution reaction (OER) in polymer electrolyte membrane water electrolysis (PEMWE). The catalytic support is also used for preparation of a carbon-free gas diffusion layer (ET30) integrated in the oxygen electrode of the membrane electrode assembly (MEA). The performance characteristics of MEA with PtM/Ebonex on ET30 are investigated in a laboratory PEMWE and compared to those of MEA with commercial carbon-based GDL with the same anode catalyst. It is proven that the chemical nature and electron density of the second metal have an essential effect on the catalyst surface structure and properties, including the lattice parameter, particle size, and electronic surface state state which in turn, reflect on the electrochemical behavior and catalytic activity. The catalysts PtCr/Ebonex and PtMn/Ebonex having deficiency of electrons in the valent d-orbital do not form an alloy with Pt and have lower catalytic activity. In contrast, the metallic components in PtFe/Ebonex and PtCo/Ebonex form a solid solution which results in changes in the catalyst structure and surface electron state, leading to enhanced OER efficieny compared to pure Pt/Ebonex

Coupled spatial multimode solitons in microcavity wires

A modal expansion approach is developed and employed to investigate and elucidate the nonlinear mechanism behind the multistability and formation of coupled multi-mode polariton solitons in microcavity wires. With pump switched on and realistic dissipation parameters, truncating the expansion up to the second-order wire mode, our model predicts two distinct coupled soliton branches: stable and ustable. Modulational stability of the homogeneous solution and soliton branches stability are studied. Our simplified 1D model is in remarkably good agreement with the full 2D mean-field Gross-Pitaevskii model, reproducing correctly the soliton existence domain upon variation of pump amplitude and the onset of multistability.Comment: 17 pages, 61 figure

Nonlinear Coherent Magneto-Optical Response of a Single Chiral Carbon Nanotube

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