388 research outputs found
Absence of ferromagnetism in V-implanted ZnO single crystals
The structural and magnetic properties of V doped ZnO are presented. V ions
were introduced into hydrothermal ZnO single crystals by ion implantation with
fluences of 1.2*10^16 to 6*10^16 cm^-2. Post-implantation annealing was
performed in high vacuum from 823 K to 1023 K. The ZnO host material still
partly remains in a crystalline state after irradiation, and is partly
recovered by annealing. The V ions show a thermal mobility as revealed by depth
profile Auger electron spectroscopy. Synchrotron radiation x-ray diffraction
revealed no secondary phase formation which indicates the substitution of V
onto Zn site. However in all samples no pronounced ferromagnetism was observed
down to 5 K by a superconducting quantum interference device magnetometer.Comment: 13 pages, 4 figs, MMM conference 2007, accepted by J. Appl. Phy
Bandgap narrowing in Mn doped GaAs probed by room-temperature photoluminescence
The electronic band structure of the (Ga,Mn)As system has been one of the
most intriguing problems in solid state physics over the past two decades.
Determination of the band structure evolution with increasing Mn concentration
is a key issue to understand the origin of ferromagnetism. Here we present room
temperature photoluminescence and ellipsometry measurements of
Ga_{100%-x}Mn_{x}As alloy. The up-shift of the valence-band is proven by the
red shift of the room temperature near band gap emission from the
Ga_{100%-x}Mn_{x}As alloy with increasing Mn content. It is shown that even a
doping by 0.02 at.% of Mn affects the valence-band edge and it merges with the
impurity band for a Mn concentration as low as 0.6 at.%. Both X-ray diffraction
pattern and high resolution cross-sectional TEM images confirmed full
recrystallization of the implanted layer and GaMnAs alloy formation.Comment: 24 pages, 7 figures, accepted at Phys. Rev. B 201
Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: experiment and theory
High quality ZnO crystals with the sharp band-edge excitonic emission and very weak green emission were implanted by nitrogen ions. An additional red emission band was observed in the as-implanted ZnO crystal and investigated as a function of temperature. By employing the underdamped multimode Brownian oscillator model for the general electron-phonon coupling system, both the original green and nitrogen-implantation induced red emission bands were theoretically reproduced at different temperatures. Excellent agreement between the theory and the experiment enables us determine the energetic positions of the pure electronic levels associated with the green and red emission bands, respectively. The determined energy level of the red emission band is in good agreement with the data obtained from the deep-level transient spectroscopy measurements. © 2012 American Institute of Physics.published_or_final_versio
High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
We have prepared the dilute magnetic semiconductor (DMS) InMnAs with
different Mn concentrations by ion implantation and pulsed laser melting. The
Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x,
reaching 82 K for x=0.105. The substitution of Mn ions at the Indium sites
induces a compressive strain perpendicular to the InMnAs layer and a tensile
strain along the in-plane direction. This gives rise to a large perpendicular
magnetic anisotropy, which is often needed for the demonstration of electrical
control of magnetization and for spin-transfer-torque induced magnetization
reversal.Comment: 16 pages, 5 figure
Deep-level defects in n-type 6H silicon carbide induced by He implantation
Defects in He-implanted n -type 6H-SiC samples have been studied with deep-level transient spectroscopy. A deep-level defect was identified by an intensity with a logarithmical dependence on the filling pulse width, which is characteristic of dislocation defects. Combined with information extracted from positron-annihilation spectroscopic measurements, this defect was associated with the defect vacancy bound to a dislocation. Defect levels at 0.380.44 eV (E1 E2), 0.50, 0.53, and 0.640.75 eV (Z1 Z2) were also induced by He implantation. Annealing studies on these samples were also performed and the results were compared with those obtained from e- -irradiated (0.3 and 1.7 MeV) and neutron-irradiated n -type 6H-SiC samples. The E1 E2 and the Z1 Z2 signals found in the He-implanted sample are more thermally stable than those found in the electron-irradiated or the neutron-irradiated samples. © 2005 American Institute of Physics.published_or_final_versio
Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealing
In the last decade, transition-metal-doped ZnO has been intensively
investigated as a route to room-temperature diluted magnetic semiconductors
(DMSs). However, the origin for the reported ferromagnetism in ZnO-based DMS
remains questionable. Possible options are diluted magnetic semiconductors,
spinodal decomposition, or secondary phases. In order to clarify this question,
we have performed a thorough characterization of the structural and magnetic
properties of Co- and Ni-implanted ZnO single crystals. Our measurements reveal
that Co or Ni nanocrystals (NCs) are the major contribution of the measured
ferromagnetism. Already in the as-implanted samples, Co or Ni NCs have formed
and they exhibit superparamagnetic properties. The Co or Ni NCs are
crystallographically oriented with respect to the ZnO matrix. Their magnetic
properties, e.g., the anisotropy and the superparamagnetic blocking
temperature, can be tuned by annealing. We discuss the magnetic anisotropy of
Ni NCs embedded in ZnO concerning the strain anisotropy.Comment: 13 pages, 14 figure
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