Direct composition profiling in III-V nanostructures by cross-sectional STM

Using cross-sectional STM we have studied the local composition in III–V nanostructures such as GaAs/InGaAs quantum wells, InGaNAs/InP quantum wells and quantum dots, and InAs/GaAs self-assembled quantum dots. We are able to determine the local composition by either simply counting the constituent atoms, measuring the local lattice constant or measuring the relaxation of the cleaved surface due to the elastic field of the buried strained nanostructures

High-fidelity initialization of long-lived quantum dot hole spin qubits by reduced fine-structure splitting

We demonstrate an on-demand hole spin qubit initialization scheme meeting four key requirements of quantum information processing: fast initialization (1/e ∼ 100 ps), high fidelity (F>99%), long qubit lifetime (2Th>T∗2≃10ns), and compatibility with optical coherent control schemes. This is achieved by rapidly ionizing an exciton in an InGaAs quantum dot with very low fine-structure splitting at zero magnetic field. Furthermore, we show that the hole spin fidelity of an arbitrary quantum dot can be increased by optical Stark effect tuning of the fine-structure splitting close to zero

Police ethics and integrity: Can a new code overturn the blue code?

This paper analyses police officer perspectives on the seriousness of potential misconduct or unethical behaviour, and the factors that might shape whether they would report their colleagues' misdemeanours. It compares responses from police officers in UK three forces, looking at potentially corrupt behaviours described in a series of scenarios. The discussion includes why some types of misdemeanour seem more likely to be reported and the potential effects of a newly introduced formal Code of Ethics. In terms of differences between ranks and roles, and different responses from different services, the study suggests that the way police culture operates is significant and needs to be more widely addressed. The study used scenario based questionnaires to elicit views about the seriousness of certain police behaviours and to ask whether officers would report colleagues' misdemeanours. It develops a previous survey by one of the authors which conducted a similar survey published in 2005. Using the same questionnaire the new study examined a larger and more diverse sample of serving officers (n=520). This new study compares responses from police officers in UK three forces, geographically distributed across the country and have differing characteristics in terms of size, rurality, population density and policing priorities

The ‘uberization of policing’? How police negotiate and operationalise predictive policing technology

Predictive policing generally refers to police work that utilises strategies, algorithmic technologies, and big data to generate near-future predictions about the people and places deemed likely to be involved in or experience crime. Claimed benefits of predictive policing centre on the technology’s ability to enable pre-emptive police work by automating police decisions. The goal is that officers will rely on computer software and smartphone applications to instruct them about where and who to police just as Uber drivers rely on similar technologies to instruct them about where to pick up passengers. Unfortunately, little is known about the experiences of the in-field users of predictive technologies. This article helps fill this gap by addressing the under researched area of how police officers engage with predictive technologies. As such, data is presented that outlines the findings of a qualitative study with UK police organisations involved in designing and trialing predictive policing software. Research findings show that many police officers have a detailed awareness of the limitations of predictive technologies, specifically those brought about by errors and biases in input data. This awareness has led many officers to develop a sceptical attitude towards predictive technologies and, in a few cases, these officers have expressed a reluctance to use predictive technologies. Based on these findings, this paper argues that claims about predictive software’s ability to neutralise the subjectivity of police work overlooks the ongoing struggles of the police officer to assert their agency and mediate the extent to which predictions will be trusted and utilised

Shape analysis of single and stacked InAs quantum dots at the atomic level by cross-sectional STM

We present a study of InAs self-assembled quantum dots in GaAs by cross-sectional scanning tunneling microscopy (X-STM). Our results shows that the dots consist of an JnGaAs alloy and that the indium content increases towards the top. The analysis of the height versus base length relation obtained from cross-sectional images of the dots show that the shape of the dots resembles that of a truncated pyramid with a square base that is oriented along the [100] and [010] directions. Our results about the shape and size agree with the analysis of previous photocurrent measurements on these samples

Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy

Structures containing stacked self-assembled InAs quantum dots within a GaAs matrix are studied by cross-sectional scanning tunneling microscopy. The dots consist of an InGaAs alloy with an increasing indium concentration in the growth direction. From comparison of the lattice constant profiles of stacked and unstacked dots, it is evident that the strain in the GaAs matrix around the dots is strongly affected by the stacking process. The results show an increasing deformation of the dots in the stack and a reduced growth rate of the GaAs spacer layers, resulting in the formation of terraces on the growth surface on which new dots form. If the total structure, containing the dot layers and the spacer layers, exceeds 30 nm, the local GaAs growth rate remains constant from this point on. The InAs dot growth rate remains constant throughout the entire stack

Shape analysis of single and stacked InAs quantum dots at the atomic level by cross-sectional STM

We present a study of InAs self-assembled quantum dots in GaAs by cross-sectional scanning tunneling microscopy (X-STM). Our results shows that the dots consist of an JnGaAs alloy and that the indium content increases towards the top. The analysis of the height versus base length relation obtained from cross-sectional images of the dots show that the shape of the dots resembles that of a truncated pyramid with a square base that is oriented along the [100] and [010] directions. Our results about the shape and size agree with the analysis of previous photocurrent measurements on these samples

Cracking self-assembled InAs quantum dots

We present a cross-sectional scanning tunneling microscopy (X-STM) investigation of InAs quantum dots in a GaAsmatrix. The structures were grown by molecular beam epitaxy (MBE) at a low growth rate of 0.01ML/s and consist of five layers of uncoupled quantum dot structures. Detailed STM images with atomic resolution show that the dots consist of an InGaAs alloy and that the indium content in the dot increases towards the top. The analysis of the height versus base-length relation obtained from cross-sectional images of the dots shows that the shape of the dots resembles that of a truncated pyramid and that the square base is oriented along the [010] and [100] directions. Using scanning tunneling spectroscopy (STS) we determined the onset for electron tunneling into the conduction and out of the valence band, both in the quantum dots and in the surroundingGaAs matrix. We found equal voltages for tunneling out of the valence band in GaAs or InGaAs whereas tunneling into GaAs occurred at higher voltages than in InGaAs