User interface development and metadata considerations for the Atmospheric Radiation Measurement (ARM) archive

This paper will discuss user interface development and the structure and use of metadata for the Atmospheric Radiation Measurement (ARM) Archive. The ARM Archive, located at Oak Ridge National Laboratory (ORNL) in Oak Ridge, Tennessee, is the data repository for the U.S. Department of Energy's (DOE's) ARM Project. After a short description of the ARM Project and the ARM Archive's role, we will consider the philosophy and goals, constraints, and prototype implementation of the user interface for the archive. We will also describe the metadata that are stored at the archive and support the user interface

Sum rules and electrodynamics of high-Tc cuprates in the pseudogap state

We explore connections between the electronic density of states (DOS) in a conducting system and the frequency dependence of the scattering rate $1/\tau(\omega)$ inferred from infrared spectroscopy. We show that changes in the DOS upon the development of energy gaps can be reliably tracked through the examination of the $1/\tau(\omega)$ spectra using the sum rules discussed in the text. Applying this analysis to the charge dynamics in high-$T_c$ cuprates we found radically different trends in the evolution of the DOS in the pseudogap state and in the superconducting state.Comment: 4 pages, 3 figure

Temperature-dependent magnetization in diluted magnetic semiconductors

We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number of complementary theoretical approaches. In general, we find that the results of our mean-field calculations, particularly the dynamical mean field theory results, give excellent qualitative agreement with the experimentally observed magnetization in systems with itinerant charge carriers, such as Ga_{1-x}Mn_xAs with 0.03 < x < 0.07, whereas our percolation-theory-based calculations agree well with the existing data in strongly insulating materials, such as Ge_{1-x}Mn_x. We comment on the issue of non-mean-field like magnetization curves and on the observed incomplete saturation magnetization values in diluted magnetic semiconductors from our theoretical perspective. In agreement with experimental observations, we find the carrier density to be the crucial parameter determining the magnetization behavior. Our calculated dependence of magnetization on external magnetic field is also in excellent agreement with the existing experimental data.Comment: 17 pages, 15 figure

Interplane Transport and Superfluid Density in Layered Superconductors

We report on generic trends in the behavior of the interlayer penetration depth $\lambda_c$ of several different classes of quasi two-dimensional superconductors including cuprates, Sr$_2$RuO$_4$, transition metal dichalcogenides and organic materials of the $(BEDT-TTF)_2X$-series. Analysis of these trends reveals two distinct patterns in the scaling between the values of $\lambda_c$ and the magnitude of the DC conductivity: one realized in the systems with a Fermi liquid (FL) ground state and the other seen in systems with a marked deviation from the FL response. The latter pattern is found primarily in under-doped cuprates and indicates a dramatic enhancement (factor $\simeq 10^2$) of the energy scale $\Omega_C$ associated with the formation of the condensate compared to the data for the FL materials. We discuss implications of these results for the understanding of pairing in high-$T_c$ cuprates.Comment: 4 pages, 2 figure

Universal scaling relation in high-temperature superconductors

Scaling laws express a systematic and universal simplicity among complex systems in nature. For example, such laws are of enormous significance in biology. Scaling relations are also important in the physical sciences. The seminal 1986 discovery of high transition-temperature (high-T_c) superconductivity in cuprate materials has sparked an intensive investigation of these and related complex oxides, yet the mechanism for superconductivity is still not agreed upon. In addition, no universal scaling law involving such fundamental properties as T_c and the superfluid density \rho_s, a quantity indicative of the number of charge carriers in the superconducting state, has been discovered. Here we demonstrate that the scaling relation \rho_s \propto \sigma_{dc} T_c, where the conductivity \sigma_{dc} characterizes the unidirectional, constant flow of electric charge carriers just above T_c, universally holds for a wide variety of materials and doping levels. This surprising unifying observation is likely to have important consequences for theories of high-T_c superconductivity.Comment: 11 pages, 2 figures, 2 table

Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States

Dynamical and transport properties of a simple single-band spin-fermion lattice model for (III,Mn)V diluted magnetic semiconductors (DMS) is here discussed using Monte Carlo simulations. This effort is a continuation of previous work (G. Alvarez, Phys. Rev. Lett. 89, 277202 (2002)) where the static properties of the model were studied. The present results support the view that the relevant regime of J/t (standard notation) is that of intermediate coupling, where carriers are only partially trapped near Mn spins, and locally ordered regions (clusters) are present above the Curie temperature T_C. This conclusion is based on the calculation of the resistivity vs. temperature, that shows a soft metal to insulator transition near T_C, as well on the analysis of the density-of-states and optical conductivity. In addition, in the clustered regime a large magnetoresistance is observed in simulations. Formal analogies between DMS and manganites are also discussed.Comment: Revtex4, 20 figures. References updated, minor changes to figures and tex

On the peak in the far-infrared conductivity of strongly anisotropic cuprates

We investigate the far-infrared and submillimeter-wave conductivity of electron-doped La_(2-x)Ce_xCuO_4 tilted 1 degree off from the ab-plane. The effective conductivity measured for this tilt angle reveals an intensive peak at finite frequency (\nu ~ 50 cm{-1}) due to a mixing of the in-plane and out-of-plane responses. The peak disappears for the pure in-plane response and transforms to the Drude-like contribution. Comparative analysis of the mixed and the in-plane contributions allows to extract the c-axis conductivity which shows a Josephson plasma resonance at 11.7 cm{-1} in the superconducting state.Comment: 4 pages, 4 figures include

Universal scaling in the dynamical conductivity of heavy fermion Ce and Yb compounds

Dynamical conductivity spectra s(w) have been measured for a diverse range of heavy-fermion (HF) Ce and Yb compounds. A characteristic excitation peak has been observed in the mid-infrared region of s(w) for all the compounds, and has been analyzed in terms of a simple model based on conduction (c)-f electron hybridized band. A universal scaling is found between the observed peak energies and the estimated c-f hybridization strengths of these HF compounds. This scaling demonstrates that the model of c-f hybridized band can generally and quantitatively describe the charge excitation spectra of a wide range of HF compounds.Comment: 5 pages, 1 table, 3 figures, to appear in J. Phys. Soc. Jpn. 76 (2007

Nonmonotonic d_{x^2-y^2} Superconducting Order Parameter in Nd_{2-x}Ce_xCuO_4

Low energy polarized electronic Raman scattering of the electron doped superconductor Nd_1.85Ce_0.15CuO_4 (T_c=22 K) has revealed a nonmonotonic d_{x^2-y^2} superconducting order parameter. It has a maximum gap of 4.4 k_BT_c at Fermi surface intersections with antiferromagnetic Brillouin zone (the ``hot spots'') and a smaller gap of 3.3 k_BT_c at fermionic Brillouin zone boundaries. The gap enhancement in the vicinity of the ``hot spots'' emphasizes role of antiferromagnetic fluctuations and similarity in the origin of superconductivity for electron- and hole-doped cuprates.Comment: 4 pages, 4 figure

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes