339 research outputs found
Spin Degree of Freedom in a Two-Dimensional Electron Liquid
We have investigated correlation between spin polarization and
magnetotransport in a high mobility silicon inversion layer which shows the
metal-insulator transition. Increase in the resistivity in a parallel magnetic
field reaches saturation at the critical field for the full polarization
evaluated from an analysis of low-field Shubnikov-de Haas oscillations. By
rotating the sample at various total strength of the magnetic field, we found
that the normal component of the magnetic field at minima in the diagonal
resistivity increases linearly with the concentration of ``spin-up'' electrons.Comment: 4 pages, RevTeX, 6 eps-figures, to appear in PR
Universality in an integer Quantum Hall transition
An integer Quantum Hall effect transition is studied in a modulation doped
p-SiGe sample. In contrast to most examples of such transitions the
longitudinal and Hall conductivities at the critical point are close to 0.5 and
1.5 (e^2/h), the theoretically expected values. This allows the extraction of a
scattering parameter, describing both conductivity components, which depends
exponentially on filling factor. The strong similarity of this functional form
to those observed for transitions into the Hall insulating state and for the
B=0 metal- insulator transition implies a universal quantum critical behaviour
for the transitions. The observation of this behaviour in the integer Quantum
Hall effect, for this particular sample, is attributed to the short-ranged
character of the potential associated with the dominant scatterers
Interactions and Scaling in a Disordered Two-Dimensional Metal
We show that a non-Fermi liquid state of interacting electrons in two
dimensions is stable in the presence of disorder and is a perfect conductor,
provided the interactions are sufficiently strong. Otherwise, the disorder
leads to localization as in the case of non-interacting electrons. This
conclusion is established by examining the replica field theory in the weak
disorder limit, but in the presence of arbitrary electron-electron interaction.
Thus, a disordered two-dimensional metal is a perfect metal, but not a Fermi
liquid.Comment: 4 pages, RevTe
Possible triplet superconductivity in MOSFETs
A theory that predicts a spin-triplet, even-parity superconducting ground
state in two-dimensional electron systems is re-analyzed in the light of recent
experiments showing a possible insulator-to-conductor transition in such
systems. It is shown that the observations are consistent with such an exotic
superconductivity mechanism, and predictions are made for experiments that
would further corroborate or refute this proposal.Comment: 4 pp., REVTeX, psfig, 1 eps fig, final version as publishe
Metal-insulator transition at B=0 in a dilute two dimensional GaAs-AlGaAs hole gas
We report the observation of a metal insulator transition at B=0 in a high
mobility two dimensional hole gas in a GaAs-AlGaAs heterostructure. A clear
critical point separates the insulating phase from the metallic phase,
demonstrating the existence of a well defined minimum metallic conductivity
sigma(min)=2e/h. The sigma(T) data either side of the transition can be
`scaled' on to one curve with a single parameter (To). The application of a
parallel magnetic field increases sigma(min) and broadens the transition. We
argue that strong electron-electron interactions (rs = 10) destroy phase
coherence, removing quantum intereference corrections to the conductivity.Comment: 4 pages RevTex + 4 figures. Submitted to PRL. Originally posted 22
September 1997. Revised 12 October 1997 - minor changes to referencing,
figure cations and figure
Magnetic-Field-Driven Superconductor-Insulator-Type Transition in Graphite
A magnetic-field-driven transition from metallic- to semiconducting-type
behavior in the basal-plane resistance takes place in highly oriented pyrolytic
graphite at a field kOe applied along the hexagonal c-axis. The
analysis of the data reveals a striking similarity between this transition and
that measured in thin-film superconductors and Si MOSFET's. However, in
contrast to those materials, the transition in graphite is observable at almost
two orders of magnitude higher temperatures.Comment: 4 Figure
Universal scaling, beta function, and metal-insulator transitions
We demonstrate a universal scaling form of longitudinal resistance in the
quantum critical region of metal-insulator transitions, based on numerical
results of three-dimensional Anderson transitions (with and without magnetic
field), two-dimensional quantum Hall plateau to insulator transition, as well
as experimental data of the recently discovered two-dimensional metal-insulator
transition. The associated reflection symmetry and a peculiar logarithmic form
of the beta function exist over a wide range in which the resistance can change
by more than one order of magnitude. Interesting implications for the
two-dimensional metal-insulator transition are discussed.Comment: 4 pages, REVTEX, 4 embedded figures; minor corrections to figures and
tex
Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs/AlGaAs at B=0
We report the transport properties of a low disorder two-dimensional hole
system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly
high peak mobility of , with hole density of in the temperature range of
. From their T, p, and electric field dependences, we find that
the metal-insulator transition in zero magnetic field in this exceptionally
clean 2DHS occurs at , which is in good agreement with the
critical for Wigner crystallization , predicted by
Tanatar and Ceperley for an ideally clean 2D system.Comment: 4 pages, 4 Postscript figure
The metal-insulator transition in Si:X: Anomalous response to a magnetic field
The zero-temperature magnetoconductivity of just-metallic Si:P scales with
magnetic field, H, and dopant concentration, n, lying on a single universal
curve. We note that Si:P, Si:B, and Si:As all have unusually large magnetic
field crossover exponents near 2, and suggest that this anomalously weak
response to a magnetic field is a common feature of uncompensated doped
semiconductors.Comment: 4 pages (including figures
The metallic resistance of a dilute two-dimensional hole gas in a GaAs quantum well: two-phase separation at finite temperature?
We have studied the magnetotransport properties of a high mobility
two-dimensional hole gas (2DHG) system in a 10nm GaAs quantum well (QW) with
densities in range of 0.7-1.6*10^10 cm^-2 on the metallic side of the
zero-field 'metal-insulator transition' (MIT). In a parallel field well above
B_c that suppresses the metallic conductivity, the 2DHG exhibits a conductivity
g(T)~0.3(e^2/h)lnT reminiscent of weak localization. The experiments are
consistent with the coexistence of two phases in our system: a metallic phase
and a weakly insulating Fermi liquid phase having a percolation threshold close
to B_c
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