A New Liquid Phase and Metal-Insulator Transition in Si MOSFETs

We argue that there is a new liquid phase in the two-dimensional electron system in Si MOSFETs at low enough electron densities. The recently observed metal-insulator transition results as a crossover from the percolation transition of the liquid phase through the disorder landscape in the system below the liquid-gas critical temperature. The consequences of our theory are discussed for variety of physical properties relevant to the recent experiments.Comment: 12 pages of RevTeX with 3 postscript figure

Aluminum Oxide Layers as Possible Components for Layered Tunnel Barriers

We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temperatures up to 550 deg C. Post-annealing at temperatures above 300 deg C results in a significant decrease of the tunneling conductance of thermally-grown barriers, while plasma-grown barriers start to change only at annealing temperatures above 450 deg C. Fitting the experimental I-V curves of the junctions using the results of the microscopic theory of direct tunneling shows that the annealing of thermally-grown oxides at temperatures above 300 deg C results in a substantial increase of their average tunnel barriers height, from ~1.8 eV to ~2.45 eV, versus the practically unchanged height of ~2.0 eV for plasma-grown layers. This difference, together with high endurance of annealed barriers under electric stress (breakdown field above 10 MV/cm) may enable all-AlOx and SiO2/AlOx layered "crested" barriers for advanced floating-gate memory applications.Comment: 7 pages, 6 figure

Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to B=0, possibly related to spin-orbit interactions.Comment: 4 pages, 3 figure

Temperature-Dependence of the Resistivity of a Dilute 2D Electron System in High Parallel Magnetic Field

We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic behavior observed in the absence of a magnetic field. In a field of 10.8 T, insulating behavior is found for densities up to n_s approximately 1.35 x 10^{11} cm^{-2} or 1.5 n_c; above this density the resistance is a very weak function of temperature, varying less than 10% between 0.25 K and 1.90 K. At low densities the resistance goes to infinity more rapidly as the temperature is reduced than in zero field and the magnetoresistance diverges as T goes to 0.Comment: 4 pages, including 4 figures. References adde

Single and Paired Point Defects in a 2D Wigner Crystal

Using the path-integral Monte Carlo method, we calculate the energy to form single and pair vacancies and interstitials in a two-dimensional Wigner crystal of electrons. We confirm that the lowest-lying energy defects of a 2D electron Wigner crystal are interstitials, with a creation energy roughly 2/3 that of a vacancy. The formation energy of the defects goes to zero near melting, suggesting that point defects might mediate the melting process. In addition, we find that the interaction between defects is strongly attractive, so that most defects will exist as bound pairs.Comment: 4 pages, 5 encapsulated figure

Metal-insulator transition in a 2D electron gas: Equivalence of two approaches for determining the critical point

The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation energy and vanishing nonlinearity of current-voltage characteristics as extrapolated from the insulating side. We find that in zero magnetic field (but not in the presence of a parallel magnetic field), both methods give equivalent results, adding support to the existence of a true zero-field metal-insulator transition.Comment: As publishe

The metallic resistance of a dilute two-dimensional hole gas in a GaAs quantum well: two-phase separation at finite temperature?

We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) system in a 10nm GaAs quantum well (QW) with densities in range of 0.7-1.6*10^10 cm^-2 on the metallic side of the zero-field 'metal-insulator transition' (MIT). In a parallel field well above B_c that suppresses the metallic conductivity, the 2DHG exhibits a conductivity g(T)~0.3(e^2/h)lnT reminiscent of weak localization. The experiments are consistent with the coexistence of two phases in our system: a metallic phase and a weakly insulating Fermi liquid phase having a percolation threshold close to B_c

Single-Particle Properties of a Two-Dimensional Fermi Liquid at finite Frequencies and Temperatures

We review the leading momentum, frequency and temperature dependences of the single particle self-energy and the corresponding term in the entropy of a two dimensional Fermi liquid (FL) with a free particle spectrum. We calculate the corrections to these leading dependences for the paramagnon model and the electron gas and find that the leading dependences are limited to regions of energy and temperature which decrease with decreasing number density of fermions. This can make it difficult to identify the frequency and temperature dependent characteristics of a FL ground state in experimental quantities in low density systems even when complications of band structure and other degrees of freedom are absent. This is an important consideration when the normal state properties of the undoped cuprate superconductors are analyzed.Comment: Revtex, 15 pages with 13 figures. minor corrections. Accepted for publication in Phy. Rev.

Metallic behavior and related phenomena in two dimensions

For about twenty years, it has been the prevailing view that there can be no metallic state or metal-insulator transition in two dimensions in zero magnetic field. In the last several years, however, unusual behavior suggestive of such a transition has been reported in a variety of dilute two-dimensional electron and hole systems. The physics behind these observations is presently not understood. We review and discuss the main experimental findings and suggested theoretical models.Comment: To be published in Rev. Mod. Phy

The Parallel Magnetoconductance of Interacting Electrons in a Two Dimensional Disordered System

The transport properties of interacting electrons for which the spin degree of freedom is taken into account are numerically studied for small two dimensional diffusive clusters. On-site electron-electron interactions tend to delocalize the electrons, while long-range interactions enhance localization. On careful examination of the transport properties, we reach the conclusion that it does not show a two dimensional metal insulator transition driven by interactions. A parallel magnetic field leads to enhanced resistivity, which saturates once the electrons become fully spin polarized. The strength of the magnetic field for which the resistivity saturates decreases as electron density goes down. Thus, the numerical calculations capture some of the features seen in recent experimental measurements of parallel magnetoconductance.Comment: 10 pages, 6 figure