'Institute of Electrical and Electronics Engineers (IEEE)'
Publication date
01/01/2011
Field of study
An extensive simulation analysis of siliconnanoribbon
field-effect transistors for the detection of chemical
warfare agents has been performed through investigation of the
physical behavior of the device. An accurate modeling of the
nanoribbon interfaces has been carried out before and after gas
exposure by combining simulation, characterization techniques
and validation against experiments. A quantitative description
of the physical mechanisms involved in the gas detection has
been obtained